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Vishay E N-Channel Power MOSFET 12A 600V Enhancement 3-Pin TO-220 SIHA100N60E-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 15.3mm |
| Length | 10.3mm |
| Model | SIHA100N60E-GE3 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 0.1Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports continuous drain current of 12 amperes for substantial load requirements.
- Provides 600 volts maximum drain-source voltage for high-voltage switching applications.
- Enhancement channel mode with low 0.1 ohm Rds(on) reduces conduction losses.
- Withstands operating temperatures from -55°C to 150°C for demanding environments.
- Typical gate charge of 33 nC allows efficient gate drive control energy.
- Maximum gate-source voltage of 30 volts ensures reliable gate overdrive margin.
- Maximum power dissipation of 35 watts supports sustained power handling.
- Compact TO-220 package with through-hole mount facilitates heatsink attachment.
Product Description
Vishay SIHA100N60E-GE3 is a high-performance E-series N-channel power MOSFET designed for demanding industrial and electronic applications requiring 12 amp continuous drain current and 600 volt maximum drain-source voltage. Its enhancement channel configuration and low 0.1 ohm on-resistance reduce conduction losses effectively.
The device is housed in a standard TO-220 three-pin package with through-hole mounting, enabling easy heatsink installation and reliable mechanical stability. It supports a broad temperature range from -55°C to 150°C, allowing use in harsh environments with appropriate thermal management.
This MOSFET features a typical gate charge of 33 nC at gate-source voltage of 30 V max, providing robust gate drive margin and controlled switching behavior. The maximum power dissipation rating is 35 W, enabling sustained operation under considerable load conditions.
A forward voltage drop of 1.2 V should be factored when calculating power loss and thermal profiles in circuit designs incorporating this device. Applications include mains-linked switch-mode power supplies, high-voltage motor inverter stages, discrete boost converters, industrial battery chargers, and power-factor correction front-end circuits.
Supports 12A maximum continuous drain current. Handles up to 600V drain-source voltage. Low on-resistance of 0.1 ohms minimizes conduction loss. Wide operating temperature range from -55°C to 150°C. TO-220 through-hole package suitable for heatsinks.
Typical gate charge of 33 nC allows efficient switching. Maximum gate-source voltage is 30 V for reliable operation. Power dissipation rating of 35 W for extended use. Forward voltage drop of 1.2 V must be considered in design.
This product is RoHS compliant and conforms to environmental standards ensuring safe industrial usage. Explore Vishay Power MOSFETs and other semiconductor products in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 amperes, suitable for substantial load requirements.
It can handle a maximum drain-source voltage of 600 volts, making it suitable for high-voltage switching applications.
The on-resistance is low at 0.1 ohms, which helps to reduce conduction losses during operation.
This MOSFET operates within a wide temperature range from -55°C to 150°C, allowing use in demanding environments.
The typical gate charge is 33 nC, which allows for efficient gate drive control energy.
The maximum power dissipation rating is 35 watts, supporting sustained operation under considerable load conditions.
It is housed in a standard TO-220 package, which features a through-hole mount for easy heatsink attachment.
The maximum gate-source voltage is 30 volts, ensuring reliable gate overdrive margin during operation.
The forward voltage drop is 1.2 volts, which should be considered when calculating power loss in circuit designs.
Yes, this product is RoHS compliant and conforms to environmental standards for safe industrial usage.
The dimensions of this model are 15.3 mm in height, 10.3 mm in length, and 4.7 mm in width.
This MOSFET is suitable for applications such as switch-mode power supplies, high-voltage motor inverters, and industrial battery chargers.
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