Vishay E N-Channel Power MOSFET 2.9A 800V Enhancement Mode Surface Mount TO-252 Package SIHD2N80AE-GE3

Vishay SIHD2N80AE-GE3 is an E-series power MOSFET designed as an N-channel enhancement-mode transistor with a maximum continuous drain current of 2.9 A and maximum drain-source voltage of 800 V. It is supplied in a TO-252 surface mount package measuring 6.73 mm in length, 6.22 mm width, and 2.25 mm height. This device is intended for industrial and power conversion applications where high voltage switching and efficient thermal handling are crucial.

The MOSFET features a low on-resistance of 2.9 Ω, which helps to reduce conduction losses during operation. With a maximum power dissipation of 62.5 W and a gate charge of 7 nC, the device provides efficient switching characteristics with moderate drive requirements. It can operate safely in ambient temperatures ranging from -55°C up to 150°C, making it ideal for robust industrial environments.

The TO-252 package design facilitates easy surface mounting on PCBs and improved heat dissipation to copper layers, aiding thermal management. Its maximum gate-source voltage rating of 30 V allows wide safety margins for gate drive voltages. The device's 3-pin configuration simplifies integration into power supply and switching circuits.

This power MOSFET is RoHS compliant, supporting environmental regulations and green design goals. Applications include high-voltage power converters, industrial switching supplies, auxiliary rails, and non-automotive high voltage load switching where automotive-grade specifications are not required.

Key features include reliable high voltage switching up to 800 V, moderate conduction losses, and robust thermal performance supporting demanding industrial applications. The enhancement-mode design ensures controlled and efficient operation in modern electronic circuits.

Maximum continuous drain current 2.9 A suits steady load currents. Drain-source voltage rated at 800 V enables high-voltage switching applications. Enhancement channel mode offers dependable transistor switching behavior.

Surface mount TO-252 package enables compact PCB mounting and thermal conduction. Typical gate charge of 7 nC allows predictable and efficient gate drive. Power dissipation rating of 62.5 W supports elevated operating temperatures.

Wide operating temperature range from -55°C to 150°C for industrial-grade resilience. Gate-source voltage rating of 30 V offers margin for gate voltage variations. Low forward voltage of 1.2 V reduces conduction losses. Fully RoHS compliant to meet environmental standards.

Explore more Vishay Power MOSFETs and related semiconductor components in EnvMart’s Electronics & Electricals category for reliable industrial and power control solutions.