STMicroelectronics N-Channel IGBT, 25 A Collector Current, 450 V Max Collector-Emitter Voltage, 3-Pin TO-263 STGB20N45LZAG

STMicroelectronics STGB20N45LZAG is an advanced N-Channel Insulated Gate Bipolar Transistor (IGBT) designed specifically for automotive ignition coil driving applications. It leverages the cutting-edge PowerMESH™ technology to deliver excellent electrical performance, low conduction losses, and enhanced ruggedness in harsh automotive environments.

Featuring a 3-pin TO-263 surface mount package, this IGBT offers easy integration onto PCBs, making it suitable for compact, high-density circuit designs. The device supports a maximum continuous collector current of 25 A and a maximum collector-emitter voltage of 450 V, providing robustness for high voltage switching and control tasks.

With a maximum power dissipation of 150 W, the STGB20N45LZAG ensures efficient thermal management, while its low saturation voltage of 1.55 V reduces overall power loss, improving energy efficiency. The device is equipped with internal ESD protection and an integrated gate resistor, eliminating the need for external protection circuitry and simplifying design.

Operable over a wide temperature range from -55°C to 175°C and compliant with the stringent AEC-Q101 automotive standard, this device offers reliability critical for automotive and industrial power applications. The 300 mJ SCIS energy rating at 25°C guarantees high short-circuit withstand capability, enhancing robustness under fault conditions.

Its logic-level gate drive and high pulsed current capability make it ideal for rapid switching applications within ignition systems and power control circuits. Features 3-pin TO-263 surface mounting for PCB assembly convenience.

Maximum continuous collector current: 25 A for reliable power handling. Max collector-emitter voltage: 450 V ensures high voltage stability. Low saturation voltage of 1.55 V for efficiency. ESD-protected gate input and integrated gate resistor included.

Wide temperature operation from -55°C to 175°C suitable for automotive climates. Complies with automotive standard AEC-Q101 for high-reliability applications. Rated 150 W power dissipation supports demanding load conditions.

300 mJ SCIS energy at 25°C for fault resilience. Optimized for ignition coil driving with advanced PowerMESH™ technology.

This STMicroelectronics IGBT is ideal for automotive, industrial, and power electronics applications requiring rugged and efficient switching components. Its design ensures durability and performance in harsh environments typical of ignition and power control systems.

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