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IXYS HiperFET N-Channel MOSFET 80 A 250 V Enhancement Type 4-Pin TO-220 IXFP80N25X3
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 16mm |
| Length | 10.66mm |
| Model | IXFP80N25X3 |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HiperFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 16mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 390W |
| Typical Gate Charge Qg @ Vgs | 83nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.4V |
Key Features
- The MOSFET supports a maximum continuous drain current of 80 Amperes.
- It features a maximum drain-source voltage of 250 Volts for robust operation.
- The TO-220 package includes 4 pins and supports through-hole mounting.
- Its maximum power dissipation is rated at 390 Watts, suitable for demanding applications.
- The device operates reliably within a temperature range from -55°C to 150°C.
- Typical gate charge at Vgs is 83 nanocoulombs, ensuring fast switching.
- The maximum gate-source voltage rating is 20 Volts to prevent damage.
- It has a low maximum drain-source resistance (Rds) of 16 milliohms for efficiency.
Product Description
IXYS IXFP80N25X3 is a N-Channel MOSFET semiconductor from the HiperFET series designed for high-efficiency power switching and energy management.
This enhancement mode MOSFET supports a maximum continuous drain current of 80 Amperes and a maximum drain-source voltage of 250 Volts, housed in a 4-pin TO-220 package suitable for through-hole mounting applications.
With a maximum power dissipation of 390 Watts and operating temperature range from -55°C to 150°C, this device is built to withstand demanding industrial environments.
The device's typical gate charge of 83 nanocoulombs at Vgs and a maximum gate-source voltage of 20 Volts ensures quick switching with low losses, enhancing operational performance in power conversion, motor control, and switching power supply circuits.
Its low on-state resistance of 16 milliohms reduces conduction losses and contributes to improved system efficiency.
IXYS HiperFET MOSFETs exhibit robust dv/dt capability and avalanche energy tolerance, making them resilient to voltage spikes and transients often encountered in industrial and automotive circuits.
Applications for the IXFP80N25X3 include battery chargers for electric vehicles, synchronous rectification in power supplies, DC-DC converters, motor drivers, uninterruptible power supplies, Class-D audio amplifiers, and telecom systems.
The MOSFET supports a maximum continuous drain current of 80 Amperes. It features a maximum drain-source voltage of 250 Volts suitable for high-power operations. The 4-pin TO-220 package facilitates efficient heat dissipation and mounting.
The device operates reliably across a wide temperature range from -55°C to 150°C. Typical gate charge of 83 nC enables fast switching performance. Designed with a low maximum Rds(on) of 16 milliohms to minimize power loss.
Enhancement type N-Channel MOSFET for flexible applications in power electronics. Maximum power dissipation of 390 Watts for high load handling. For reliable, high-performance power semiconductor components, explore more products in the Power MOSFET category on EnvMart.
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Frequently Asked Questions
The IXFP80N25X3 supports a maximum continuous drain current of 80 Amperes.
This model features a maximum drain-source voltage of 250 Volts, suitable for high-power operations.
It has a maximum power dissipation rating of 390 Watts, allowing it to handle demanding applications.
The device operates reliably within a temperature range from -55°C to 150°C.
The typical gate charge at Vgs is 83 nanocoulombs, ensuring fast switching performance.
It has a maximum gate-source voltage rating of 20 Volts to prevent damage to the device.
This model is housed in a TO-220 package and supports through-hole mounting.
It has a low maximum drain-source resistance (Rds) of 16 milliohms, which enhances efficiency.
The dimensions of the IXFP80N25X3 are 16mm in height, 10.66mm in length, and 4.83mm in width.
The IXFP80N25X3 features an enhancement type N-channel design, suitable for flexible applications in power electronics.
This model is part of the HiperFET series, designed for high-efficiency power switching and energy management.
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