Toshiba TK N-Channel Enhancement MOSFET, 60 A, 120 V, 3-Pin TO-220 TK32A12N1,S4X(S

Toshiba TK32A12N1,S4X(S is an N-Channel enhancement mode MOSFET transistor designed for high performance with a continuous drain current capacity of 60 A and a maximum drain source voltage of 120 V. Packaged in the widely used TO-220 form factor, this device supports through-hole mounting for ease of assembly on printed circuit boards.

With a maximum power dissipation of 30 W, it is well-suited for use in power electronics, industrial control systems, and various semiconductor applications requiring efficient switching and power management at elevated temperatures up to 150°C.

The MOSFET offers a low maximum drain source resistance of 13.8 milliohms, which helps reduce conduction losses and improves overall efficiency. Its typical gate charge of 34 nC at the gate-source voltage enables fast switching characteristics essential in high-frequency applications.

Physically, the device measures 15 mm in height, 10 mm in length, and 4.5 mm in width, accommodating compact electronic designs. The 3-pin configuration ensures straightforward connectivity and compatibility with a wide range of existing electronic circuits.

This Toshiba power MOSFET is manufactured in China and does not carry any formal standards or automotive certifications but is suited for various commercial and industrial semiconductor uses in electronics manufacturing, power management, and embedded systems.

This MOSFET utilizes a TO-220 package and operates with an enhancement channel mode. Maximum power dissipation rated at 30 W ensures reliable operation in demanding environments. It has a low maximum drain source resistance of 13.8 milliohms, enhancing efficiency.

The device features a typical gate charge of 34 nC at Vgs, allowing for quick switching. Designed with a maximum operating temperature of 150°C for high thermal stability. The component mounts through-hole with 3 pins arranged for ease of integration.

Its compact dimensions include a height of 15 mm, length of 10 mm, and width of 4.5 mm. Suitable for various electronic and industrial semiconductor applications requiring robust power MOSFETs. Explore more high-performance electronic components and power MOSFETs at EnvMart, your trusted source for industrial-grade semiconductor devices and electronics components.