Toshiba TK N-Channel MOSFET 5.4 A 600 V Enhancement Mode 3-Pin Surface Mount TO-252 TK5P60W,RVQ(S

Toshiba TK5P60W,RVQ(S N-Channel MOSFET is a discrete semiconductor device designed for electronic applications requiring efficient switching and amplification. Featuring a 3-pin TO-252 surface mount package, this MOSFET handles a maximum continuous drain current of 5.4 A and a drain-source voltage of up to 600 V, making it suitable for power management and conversion circuits.

The transistor utilizes enhancement mode channel operation for stable and reliable conduction. Its low on-resistance of 900 milliohms minimizes conduction losses, while the typical gate charge of 10.5 nanocoulombs supports high switching speeds essential in industrial and commercial electronics.

With a maximum power dissipation rating of 60 watts and operating temperature capability up to 150°C, this MOSFET is robust for demanding environments such as power supplies, motor drivers, and inverter circuits. The device's gate-source voltage range from -30 V to +30 V allows flexibility in drive voltages without risk of damage.

Compact physical dimensions (6.6 mm length, 7.18 mm width, 2.3 mm height) make it ideal for PCB assembly with constrained space. Surface mounting enhances board design simplicity and thermal management.

This TK series semiconductor produced by Toshiba is manufactured in China and conforms to industrial standards though no specific approvals or automotive certifications apply. It is commonly employed in electronic component assemblies within consumer electronics, renewable energy systems, industrial machinery, and automotive electronics sectors.

Enhancement mode N-channel technology ensures efficient switching. TO-252 surface mount package facilitates compact circuit designs. 5.4 A drain current capacity supports high load applications. 600 V drain-source voltage rating accommodates high voltage circuits.

Low drain-source resistance minimizes power loss and heating. High maximum power dissipation withstands thermal stress. Wide gate voltage tolerance increases operational reliability. Compact dimensions suit dense PCB layouts.

Operating temperature up to 150°C supports harsh environments.

This Toshiba MOSFET is highly recommended for use in industrial, commercial, and consumer electronic power management solutions. For comprehensive component selections, browse the Electronics & Electricals > Discrete Semiconductors > MOSFET category at EnvMart.