Toshiba TK N-Channel MOSFET 100 A 60 V Enhancement Mode 3-Pin TO-220 TK100A06N1,S4X(S

Toshiba TK100A06N1,S4X(S is an N-Channel MOSFET semiconductor device designed for high-current switching and power control applications. Featuring a robust TO-220 package with a 3-pin through-hole mount, it supports a maximum continuous drain current of 100 A and a maximum drain source voltage of 60 V. The device operates in enhancement mode and has a maximum power dissipation of 45 W, making it suitable for industrial and electronic power management circuits.

This MOSFET performs reliably across a wide operating temperature range from -55°C to 150°C. It has a low maximum drain source resistance (2.2 mΩ) which ensures high efficiency and reduced heat generation during switching operations. The typical gate charge of 140 nC at its specified gate voltage indicates low switching energy losses, enhancing performance in PWM and fast-switching applications.

The maximum gate source voltage range (-20 V to +20 V) allows flexibility in drive voltage requirements, securing safe operation within electronic equipment. The forward voltage drop is -1.2 V, characteristic of power MOSFETs in this class. Its compact dimensions (height 15 mm, length 10 mm, width 4.5 mm) enable integration into tight PCB layouts and various electronic products. While this model does not carry automotive certifications, it is manufactured to industrial standards in China.

This MOSFET is ideal for use in power management for electronics equipment, industrial controls, and other applications requiring high current switching with excellent thermal and electrical performance. The TO-220 package enables easy mounting and heat dissipation, making the device suitable for both prototype development and mass production.

Enhancement mode N-Channel MOSFET optimized for high current control. TO-220 package for through-hole mounting and efficient heat dissipation. Supports 100 A continuous drain current and 60 V maximum drain source voltage.

Maximum power dissipation of 45 W ensures robust performance under load. Low drain source resistance reduces conduction losses. Wide operating temperature range (-55°C to 150°C) enhances reliability. Typical gate charge of 140 nC allows efficient switching.

Gate voltage tolerance of -20 V to +20 V provides operational flexibility. Compact physical dimensions for easy integration into electronic assemblies. Explore other semiconductor components and power MOSFETs in the Electronics & Electricals category at EnvMart for your electronic manufacturing and design requirements.