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Toshiba Type N-Channel MOSFET 65 A 60 V Enhancement Mode Surface Mount 8-Pin TSON TPN14006NH,L1Q(M
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 0.85mm |
| Length | 3.1mm |
| Model | TPN14006NH,L1Q(M |
| Width | 3.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 65A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 41mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Maximum continuous drain current of 65 A ensures robust handling of power loads.
- Maximum drain-source voltage of 60 V provides substantial voltage tolerance.
- Surface mount 8-pin TSON package facilitates compact PCB design.
- Low on-resistance of 41 mΩ minimizes power loss and heat generation.
- Enhanced mode operation with a threshold voltage between 2.0 to 4.0 V.
- Typical gate charge of 15 nC supports fast switching speeds.
- Maximum power dissipation of 30 W for reliable thermal performance.
- Wide operating temperature range from -55°C to 150°C for diverse environments.
Product Description
Toshiba TPN14006NH,L1Q(M Type N-Channel MOSFET is a high-performance device intended for industrial and electronic applications requiring reliable and efficient power switching. It features a maximum continuous drain current of 65 A and a drain-source voltage rating of 60 V, making it suitable for high current and voltage operations.
This MOSFET uses an 8-pin TSON surface-mount package with compact dimensions of 3.1 mm length, 3.1 mm width, and 0.85 mm height, ideal for space-constrained designs on printed circuit boards.
Key technical strengths include a low drain-source on-resistance of 41 mΩ that reduces conduction losses, and a typical gate charge of 15 nC enabling high-speed switching suitable for applications such as switching voltage regulators, motor drivers, and DC-DC converters.
Designed with enhancement mode operation (threshold voltage between 2.0 V and 4.0 V), this MOSFET delivers efficient control and energy management. It can operate safely across a wide temperature range from -55°C up to 150°C, ensuring durability in harsh industrial or automotive environments.
Additional features include a maximum power dissipation of 30 W and a maximum gate-source voltage of 20 V. The device maintains low leakage current of 10 μA max at full drain-source voltage, optimizing energy efficiency when idle.
Maximum continuous drain current of 65 A. Maximum drain-source voltage of 60 V. Surface mount 8-pin TSON package. Low on-resistance of 41 mΩ. Enhancement mode with Vth of 2.0 to 4.0 V. Typical gate charge of 15 nC for fast switching.
Maximum power dissipation of 30 W. Wide operating temperature range -55°C to 150°C. Low leakage current of 10 μA max at 60 V.
This Toshiba MOSFET is widely applicable in industrial automation, power supplies, motor control, HVAC, and general electronic device manufacturing. It offers an efficient solution for power management in compact, high-performance circuit designs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 65 A, allowing it to handle substantial power loads effectively.
It has a maximum drain-source voltage rating of 60 V, providing significant voltage tolerance for various applications.
This MOSFET comes in an 8-pin TSON surface mount package with dimensions of 3.1 mm in length, 3.1 mm in width, and 0.85 mm in height.
The typical gate charge for this MOSFET is 15 nC, which supports fast switching speeds in applications.
The threshold voltage for enhancement mode operation ranges from 2.0 V to 4.0 V, enabling efficient control in power management.
The maximum power dissipation for this model is 30 W, ensuring reliable thermal performance during operation.
It operates safely across a wide temperature range from -55°C to 150°C, making it suitable for diverse environments.
The maximum gate-source voltage for this MOSFET is 20 V, which is important for ensuring safe operation.
The on-resistance of this model is 41 mΩ, which helps minimize power loss and heat generation during operation.
This MOSFET is suitable for applications including industrial automation, power supplies, motor control, HVAC, and general electronic device manufacturing.
The maximum leakage current at full drain-source voltage is 10 μA, optimizing energy efficiency when the device is idle.
The country of origin for this MOSFET is India, indicating its manufacturing location.
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