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Toshiba N-Channel MOSFET, 39 A, 600 V Enhancement Mode, 3-Pin TO-247 TK39N60W,S1VF(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 20.95mm |
| Length | 15.94mm |
| Model | TK39N60W,S1VF(S |
| Width | 5.02mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 39A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 270W |
| Typical Gate Charge Qg @ Vgs | 110nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- This MOSFET has a low on-resistance of 65 milliohms for efficient conduction.
- The maximum power dissipation rating is 270 W, allowing high power applications.
- Typical gate charge is 110 nanocoulombs at 10 V gate-source voltage.
- It supports a maximum gate-source voltage range of -30 V to +30 V.
- Forward voltage drop is approximately 1.7 V ensuring minimal voltage losses.
- Maximum operating temperature is 150 degrees Celsius, suitable for robust operating environments.
- The device dimensions are 20.95 mm in height, 15.94 mm in length, and 5.02 mm in width.
- Manufactured in China, this transistor belongs to Toshiba's TK series.
Product Description
Toshiba TK39N60W,S1VF(S is a high-performance N-Channel MOSFET suited for various power electronics applications. Rated for a maximum continuous drain current of 39 amperes and a drain-source voltage of 600 volts, this enhancement mode MOSFET provides reliable switching performance in demanding industrial and consumer electronics circuits.
Encased in a 3-pin TO-247 through-hole package, this transistor ensures efficient heat dissipation and ease of mounting on power boards. It features a low maximum drain-source resistance of 65 milliohms that minimizes conduction losses, thereby improving energy efficiency in applications such as motor drives, power converters, and switching power supplies.
The gate charge of 110 nanocoulombs supports fast switching speeds, crucial for high-frequency operation. The rated gate-source voltage of -30 to +30 volts allows robust control without gate damage risks. Designed to handle power dissipation up to 270 watts, the MOSFET can be used in applications requiring substantial power handling and thermal tolerance.
Operating safely up to 150 degrees Celsius, it supports industrial temperature ranges. The physical dimensions of 20.95 mm height, 15.94 mm length, and 5.02 mm width allow fitting in compact assemblies. This model is part of the Toshiba TK series and manufactured in China, representing a trusted quality standard for reliable circuit performance.
Low drain-source resistance ensures efficient conduction. High power dissipation rating supports demanding applications. Robust gate voltage tolerance enhances control reliability. Compact package size fits various industrial designs.
Wide operating temperature range for harsh environment suitability.
This MOSFET is ideal for industrial electronics, power management, automotive electronics, and consumer device power stages. For more power semiconductor components from Toshiba, explore the extensive collection at EnvMart, featuring reliable electronic components designed for durability and performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 39 amperes.
This MOSFET has a maximum drain-source voltage rating of 600 volts.
The maximum power dissipation rating for this unit is 270 watts.
The typical gate charge at a 10 V gate-source voltage is 110 nanocoulombs.
It supports a maximum gate-source voltage range of -30 V to +30 V.
The dimensions of this model are 20.95 mm in height, 15.94 mm in length, and 5.02 mm in width.
The maximum operating temperature for this MOSFET is 150 degrees Celsius.
This model is encased in a 3-pin TO-247 through-hole package.
The maximum drain-source resistance for this unit is 65 milliohms.
This MOSFET is suitable for applications in industrial electronics, power management, automotive electronics, and consumer device power stages.
The forward voltage drop is approximately 1.7 volts, ensuring minimal voltage losses.
This device is an N-channel MOSFET operating in enhancement mode.
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