Toshiba N-Channel MOSFET, 400 mA, 60 V Enhancement, 3-Pin SOT-23 T2N7002BK

Toshiba T2N7002BK is a high-performance N-Channel MOSFET designed for electronic applications requiring low voltage and current switching. This device supports a maximum continuous drain current of 400 mA and can withstand a drain-to-source voltage up to 60 V. It features enhancement mode operation with low on-resistance (RDS(ON)) values, reducing conduction losses during switching.

Packaged in a compact 3-pin SOT-23 surface mount form factor, the T2N7002BK is well-suited for space-sensitive circuit board designs. Its compact size with dimensions approximately 2.9 mm in length, 1.3 mm in width, and 900 μm in height adds value where miniaturization is critical.

The MOSFET operates reliably across a broad temperature range from -55°C to 150°C, making it suitable for industrial electronics, power supply circuits, and consumer electronics requiring robust thermal performance.

Additional technical attributes include a typical gate charge of 0.39 nC at VGS, a maximum gate-source voltage rating of 20 V, and a maximum power dissipation of 1 W. The device’s enhancement mode simplifies control circuit design and improves energy efficiency.

This Toshiba MOSFET finds application in switching regulators, load switches, and small motor control circuits within industrial, commercial, and laboratory electronic equipment. Supports continuous current up to 400 mA.

Voltage rating of 60 V ensures use in low voltage power circuits. Low gate charge enables fast switching and improved efficiency. Compact SOT-23 package for surface mount assembly. Wide temperature range suitable for industrial environments.

Maximum power dissipation rating of 1 W. Designed for high-speed switching applications. Reliable manufacturing quality with Toshiba brand assurance. Explore more semiconductor and MOSFET options in our Electronics & Electricals category on EnvMart for diverse industrial and electronic engineering needs.