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DiodesZetex Isolated Dual N and P-Channel Power MOSFET, 5.2A Continuous Drain Current, 20V Drain Source DMC2038LVT-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 0.9mm |
| Length | 2.95mm |
| Model | DMC2038LVT-7 |
| Width | 1.65mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | TSOT |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL 94V-0, J-STD-020, MIL-STD-202, AEC-Q101, RoHS |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 5.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 168mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.1W |
| Typical Gate Charge Qg @ Vgs | 5.7nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.1V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET operates with an enhancement channel mode.
- The device has a maximum power dissipation rating of 1.1 W.
- It features a low maximum drain-source resistance of 168 milliohms for efficient performance.
- The transistor configuration is isolated for improved device integration.
- It supports a typical gate charge of 5.7 nanocoulombs at a gate-source voltage.
- Operating temperature range spans from -55°C to +150°C ensuring reliable operation.
- The package dimensions are compact with length 2.95 mm, width 1.65 mm, and height 0.9 mm.
- The device complies with automotive standard AEC-Q101 and various industry standards including RoHS.
Product Description
DiodesZetex DMC2038LVT-7 is a high-quality isolated dual N-channel and P-channel power MOSFET designed for surface mounting in electronic circuits. It offers a continuous drain current of 5.2 amperes and a maximum drain-source voltage of 20 volts, making it suitable for a wide range of industrial and automotive applications requiring efficient power switching and amplification.
The device is housed in a 6-pin TSOT package with a compact footprint measuring 2.95 mm in length, 1.65 mm in width, and 0.9 mm in height, allowing for dense PCB layouts. It operates in enhancement channel mode which provides enhanced switching performance. The MOSFET has a maximum drain-source on-resistance of 168 milliohms which contributes to minimal conduction losses and improved energy efficiency.
Rated for maximum power dissipation of 1.1 watts, this MOSFET is capable of handling moderate power loads reliably. The gate charge is kept low at 5.7 nanocoulombs, resulting in faster gate switching and reduced switching losses. The maximum gate-source voltage rating of ±12 V ensures device robustness in typical circuit conditions.
The operating temperature range from -55°C to +150°C supports demanding environments including automotive and industrial sectors. The device conforms to the automotive standard AEC-Q101 and meets UL 94V-0 flammability, J-STD-020 moisture sensitivity, MIL-STD-202 robustness, and RoHS environmental directives, reflecting its quality and safety credentials.
Typical applications include automotive powertrain control, industrial motor drivers, DC-DC converters, and power management circuits in consumer electronics. Its isolated transistor configuration simplifies integration in complex mixed-signal designs.
This MOSFET supports dual N and P channel types for increased design flexibility. The device offers surface mount assembly with a 6-pin TSOT package for compactness. Its automotive qualification ensures suitability for demanding operational environments.
Complies with multiple international standards for safety and reliability. Compact size and low on-resistance optimize circuit efficiency and board space. Explore more Power MOSFET solutions and components at EnvMart to support your industrial, automotive, and electronics manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.2 amperes.
The maximum drain-source voltage rating is 20 volts.
It has a maximum power dissipation rating of 1.1 watts.
The package dimensions are 2.95 mm in length, 1.65 mm in width, and 0.9 mm in height.
The typical gate charge is 5.7 nanocoulombs at a gate-source voltage.
The maximum gate-source voltage rating is ±12 volts.
The operating temperature range spans from -55°C to +150°C.
This model features an isolated dual N-channel and P-channel configuration.
The maximum drain-source resistance is 168 milliohms.
It complies with the automotive standard AEC-Q101.
The device meets UL 94V-0, J-STD-020, MIL-STD-202, and RoHS standards.
This model is designed for surface mounting.
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