onsemi N-Channel Power MOSFET TO-252, 24 A Drain Current, 60 V Voltage, 3-Pin Surface Mount NTD24N06LT4G

The onsemi NTD24N06LT4G is a high-performance N-Channel Power MOSFET designed for efficient switching and power management in various industrial and electronic applications. Housed in a compact TO-252 surface mount package, it offers superior current conduction capability of up to 24 A continuous drain current and a maximum drain-source voltage of 60 V.

This device operates in enhancement mode with a low drain-source resistance of 45 mΩ, enhancing circuit efficiency and reducing thermal losses. It withstands a broad temperature range from -55°C to 175°C, making it suitable for harsh industrial, automotive, and commercial environments where reliability is critical.

The MOSFET features a maximum power dissipation of 62.5 W and a typical gate charge of 16 nC at specified gate voltage levels, allowing for rapid switching performance and minimal energy losses in high-frequency circuits. Its gate-source voltage tolerance of ±15 V ensures protection against voltage spikes and stable gate operation.

With precise dimensions of 6.73 mm in length, 6.22 mm in width, and a height of 2.38 mm, this component fits well into compact circuit designs restricted by PCB space. The forward voltage drop of 1.1 V further reduces the conduction loss, promoting energy savings in applications such as power supplies, motor drivers, and DC-DC converters.

Supports maximum continuous drain current of 24 A for heavy load handling. Maximum drain-source voltage rating of 60 V suitable for medium voltage circuits. TO-252 surface mount package allows compact PCB assembly and heat dissipation.

Enhancement mode channel provides reliable switching performance. Maximum power dissipation rating of 62.5 W ensures effective heat management. Wide operating temperature range from -55°C to 175°C for rugged industrial use.

Low typical gate charge of 16 nC enables fast switching and efficiency. Maximum gate-source voltage of ±15 V protects gate integrity. Compact dimensions: length 6.73 mm, width 6.22 mm, height 2.38 mm. Forward voltage drop at 1.1 V aids in minimizing conduction loss.

This MOSFET is ideal for use in industrial automation, power management circuits, HVAC systems, and general electronic switching devices. It delivers reliable performance in a wide range of environments, supporting both high power and compact design needs.

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