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STMicroelectronics N-Channel Power MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247 Package STW75N65DM6-4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 5.1mm |
| Length | 40.92mm |
| Model | STW75N65DM6-4 |
| Width | 15.8mm |
| Mount Type | Through Hole |
| Series | STW |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 480W |
| Typical Gate Charge Qg @ Vgs | 118nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Supports a maximum continuous drain current of 55 amperes.
- Maximum drain-source voltage rating of 30 volts.
- Features an enhancement mode channel with a low on-resistance of 45 milliohms.
- Constructed in a TO-247 4-pin through-hole package type.
- Offers low gate charge and input capacitance for efficient switching.
- Capable of dissipating up to 480 watts of power.
- Operational temperature range from -55°C to 150°C.
- Includes a fast recovery body diode with extremely high dv/dt ruggedness.
Product Description
STMicroelectronics STW75N65DM6-4 is a high-voltage N-Channel Power MOSFET part of the MDmesh DM6 series, optimized for superior switching performance in demanding industrial and automotive applications.
This MOSFET supports a maximum continuous drain current of 55 A and a maximum drain-source voltage of 30 V, making it suitable for high-efficiency bridge topologies and zero voltage switching (ZVS) phase-shift converters.
The device is housed in a TO-247 4-pin through-hole package, providing reliable mounting and heat dissipation. Key features include a low on-resistance of 45 mΩ to improve conduction efficiency, a fast recovery body diode, and extremely high dv/dt ruggedness to endure harsh switching conditions.
With a maximum power dissipation rating of 480 W and an operating temperature range from -55°C to 150°C, this MOSFET is robust for demanding industrial environments. Its low typical gate charge (118 nC at Vgs) allows for reduced switching losses and enhanced efficiency.
The STW75N65DM6-4 complies with UL standards and the automotive AEC-Q101 standard, making it highly reliable for automotive and industrial applications. High continuous drain current capacity of 55 A. Low drain-source resistance for high efficiency.
Fast recovery diode reduces switching losses. Robust operating temperature range from -55°C to 150°C. TO-247 package enables effective thermal management. Suitable for bridge topologies and phase-shift converters. Compliant with automotive and UL standards.
Extremely rugged design with Zener-protected gate. Low gate charge for efficient switching performance. This MOSFET is ideal for industrial, automotive, power electronics, and high-efficiency switching applications requiring durability and performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 amperes.
This MOSFET has a maximum drain-source voltage rating of 30 volts.
It features a low on-resistance of 45 milliohms, which improves conduction efficiency.
This model is capable of dissipating up to 480 watts of power.
The operational temperature range for this unit is from -55°C to 150°C.
It is housed in a TO-247 4-pin through-hole package type, which allows for reliable mounting and heat dissipation.
This model complies with the automotive AEC-Q101 standard, ensuring reliability for automotive applications.
The typical gate charge at Vgs is 118 nC, which helps reduce switching losses.
The dimensions are 40.92 mm in length, 15.8 mm in width, and 5.1 mm in height.
The maximum gate-source voltage for this model is 20 volts.
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