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Vishay SQ Rugged N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 1.02mm
Length 3.04mm
Model SQ2310ES-T1_BE3
Width 1.4mm
Mount Type Surface
Series SQ Rugged
Maximum Operating Temperature 175°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 6A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 0.03Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 8.5nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf 1.2V
Standards/ApprovalsIEC 61249-2-21, RoHS 2002/95/EC

Key Features

  • Features a low on-resistance of 0.03 ohms for efficient conduction.
  • Capable of operating at junction temperatures up to 175°C.
  • Supports maximum power dissipation of 2 watts for reliable performance.
  • Enhanced gate charge of 8.5 nC at Vgs optimizes switching efficiency.
  • Complies with automotive standard AEC-Q101 ensuring ruggedness and reliability.
  • Designed with a surface mount type package for easy PCB integration.
  • Operates in enhancement mode with a maximum gate-source voltage of -8 to +8 volts.
  • Meets IEC 61249-2-21 and RoHS 2002/95/EC environmental standards.

Product Description

Vishay SQ2310ES-T1_BE3 is an N-Channel TrenchFET Power MOSFET designed specifically for automotive and industrial applications demanding rugged, high-reliability components. With a maximum continuous drain current of 6 A and a drain-source voltage rating of 20 V, this MOSFET supports efficient power switching with low conduction losses due to its low on-resistance of 0.03 ohms.

This device operates in enhancement mode and features a typical gate charge of 8.5 nC at the gate-source voltage, enabling rapid switching in high-frequency circuits. It supports a maximum power dissipation of 2 watts and can withstand junction temperatures as high as 175°C, making it ideal for demanding environmental conditions.

The SQ rugged series from Vishay Semiconductor is AEC-Q101 qualified, meeting stringent automotive standards to ensure durability and long life. Packaged in a surface mount SOT-23 package with compact dimensions (3.04 mm length, 1.4 mm width, and 1.02 mm height), this MOSFET facilitates miniaturized circuit designs.

Compliance with IEC 61249-2-21 and RoHS 2002/95/EC standards highlights its environmental compatibility and electrical performance reliability. This 3-pin MOSFET is suitable for industrial, automotive, and commercial electronic systems requiring robust power switching components.

Features a low on-resistance of 0.03 ohms for efficient conduction. Capable of operating at junction temperatures up to 175°C. Supports maximum power dissipation of 2 watts for reliable performance. Enhanced gate charge of 8.5 nC at Vgs optimizes switching efficiency.

Complies with automotive standard AEC-Q101 ensuring ruggedness and reliability. Designed with a surface mount type package for easy PCB integration. Operates in enhancement mode with a maximum gate-source voltage of -8 to +8 volts.

Compact dimensions: length 3.04 mm, width 1.4 mm, and height 1.02 mm suitable for space-saving designs. Meets IEC 61249-2-21 and RoHS 2002/95/EC environmental standards.

EnvMart offers a wide range of electronic components like this MOSFET, ideal for use in automotive electronics, industrial controls, power management systems, and other precision electronic assemblies requiring dependable and efficient power transistors.

Vishay SQ Rugged N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
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Frequently Asked Questions

The maximum continuous drain current for this model is 6 A.

This MOSFET has a maximum drain-source voltage rating of 20 V.

It features a low on-resistance of 0.03 ohms, which aids in efficient conduction.

The maximum power dissipation supported by this model is 2 watts.

The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.

The typical gate charge at the gate-source voltage is 8.5 nC.

It can operate at junction temperatures up to 175°C.

This MOSFET complies with the automotive standard AEC-Q101, ensuring ruggedness and reliability.

The channel type of this model is N-channel, operating in enhancement mode.

It meets IEC 61249-2-21 and RoHS 2002/95/EC environmental standards.

The maximum gate-source voltage is -8 to +8 volts.

This model is designed for surface mounting, facilitating easy PCB integration.

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