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DiodesZetex Isolated Dual N-Channel and P-Channel Power MOSFET 4.5 A 30 V Enhancement Mode 6-Pin TSOT DMG6601LVT-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 0.9mm |
| Length | 2.9mm |
| Model | DMG6601LVT-7 |
| Width | 1.6mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | TSOT |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0 |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 5.4nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 0.75V |
| Transistor Configuration | Isolated |
Key Features
- This device features isolated configuration with dual N-channel and P-channel MOSFET transistors for versatile power switching.
- It supports enhancement mode operation suitable for efficient power management applications.
- The MOSFET provides a maximum power dissipation of 1.3 W and low typical gate charge of 5.4 nC at Vgs for low switching losses.
- The device is designed for surface mount with a compact 0.9 mm height, 2.9 mm length, and 1.6 mm width footprint.
- It meets automotive AEC-Q101 standard and is RoHS compliant, suitable for automotive and industrial use cases.
- Operational temperature range spans from -55°C to +150°C, supporting harsh environmental conditions.
- The maximum drain-source resistance is 190 milliohms ensuring efficient conduction.
- It withstands maximum gate source voltages of -12 V and +12 V, enhancing reliability.
Product Description
DiodesZetex DMG6601LVT-7 Isolated Dual N/P-Channel Power MOSFET is a compact and efficient semiconductor device designed for power switching applications within industrial, automotive, and electronic systems. It features isolated N-Channel and P-Channel enhancement mode MOSFETs integrated within a slender 6-pin TSOT package, enabling flexible circuit configurations.
This MOSFET supports a maximum continuous drain current of 4.5 A and a drain-source voltage rating of 30 V, making it suitable for low-voltage power management tasks. The device dissipates up to 1.3 W of power and maintains low gate charge values to minimize switching losses, enhancing overall efficiency in fast switching environments.
Housed in a surface-mount TSOT package with a height of 0.9 mm, length of 2.9 mm, and width of 1.6 mm, the DMG6601LVT-7 is ideal for high-density PCB layouts. It meets stringent standards including automotive-grade AEC-Q101, RoHS, MIL-STD-202, and J-STD-020 certifications, ensuring reliability under demanding operational conditions.
The transistor withstands continuous operating temperatures ranging from -55°C to +150°C, suitable for rugged applications in automotive and industrial sectors. Its maximum drain-source resistance of 190 milliohms enables efficient conduction, while gate source voltages of up to ±12 V support robust switching performance.
This dual N/P-Channel MOSFET device balances efficient power handling and compact design. It is compliant with automotive and environmental standard requirements for quality assurance. The device’s small footprint and surface mount design allow usage in space-constrained electronic assemblies.
Ideal for use in power management, motor control, and switching applications in automotive and industrial electronics.
Package contains a single DMG6601LVT-7 device mounted on a reel for convenient automated PCB assembly. Suitable for use in industrial electronic equipment, automotive power control modules, and consumer electronics requiring reliable MOSFETs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.5 A.
It has a maximum drain-source voltage rating of 30 V.
This model has a height of 0.9 mm, a length of 2.9 mm, and a width of 1.6 mm.
The typical gate charge at Vgs is 5.4 nC.
The maximum power dissipation for this device is 1.3 W.
The operational temperature range spans from -55°C to +150°C.
It is housed in a TSOT package.
It meets the automotive AEC-Q101 standard.
The maximum gate-source voltage is -12 V and +12 V.
The maximum drain-source resistance is 190 milliohms.
It complies with AEC-Q101, RoHS, MIL-STD-202, J-STD-020, and UL 94V-0 standards.
The transistor configuration is isolated, featuring dual N-channel and P-channel MOSFETs.
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