onsemi PowerTrench N-Channel MOSFET, 170 mA, 100 V Enhancement Mode, 3-Pin SOT-23 Package BSS123

onsemi BSS123 is a PowerTrench N-Channel MOSFET designed for efficient switching and amplification in electronic circuits. It features a maximum continuous drain current of 170 mA and a drain-source voltage rating of 100 V, making it suitable for low-power switching applications.

This enhancement mode transistor is housed in a compact 3-pin SOT-23 surface-mount package with precise dimensions of 2.92 mm length, 1.3 mm width, and 930 μm height, optimized for space-constrained electronics.

The device offers a maximum drain-source resistance of 6 ohms, minimizing conduction losses and improving overall circuit efficiency. Its typical gate charge of 1.8 nC enables fast switching with low power consumption, reducing switching losses and heat generation.

Built to withstand a wide temperature range from -55°C to 150°C, the BSS123 is well-suited for demanding industrial and automotive applications. The maximum gate-source voltage tolerance of ±20 V ensures resilience against voltage transients and spikes.

The transistor supports a power dissipation limit of 360 mW, ensuring stable operation under various electrical and thermal loads. It has a forward voltage of 1.3 V, suitable for precise control in low voltage circuits.

This MOSFET meets stringent automotive standards including AEC-Q100, AEC-Q101, and AEC-Q200, highlighting its reliability in automotive electronics systems.

Use cases include industrial automation, automotive electronics, low voltage power switching, signal amplification, and embedded system designs requiring compact and robust transistor solutions.

The device features a compact 3-pin SOT-23 surface-mount package suitable for high-density circuit boards. It has a low maximum drain-source resistance of 6 ohms improving efficiency in switching applications. Power dissipation capability is rated up to 360 mW ensuring reliable operation under thermal stress.

Typical gate charge at 1.8 nC allows efficient gate drive with low switching losses. Operating temperature range spans -55°C to +150°C suitable for industrial and automotive environments. Maximum gate-source voltage is ±20 V providing robustness against voltage spikes.

Packaging dimensions include a length of 2.92 mm, width of 1.3 mm and height of 930 μm for flexible mounting. The component complies with automotive standards AEC-Q100, AEC-Q101, and AEC-Q200, ensuring high reliability. Explore other onsemi semiconductor products and MOSFETs at EnvMart for a broad range of electronic component needs.