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Vishay E N-Channel Power MOSFET 29 A Continuous Drain Current 600 V Drain Source Voltage 8-Pin PowerPAK SIHK075N60E-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHK075N60E-T1-GE3 |
| Mount Type | Surface |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 10 x 12 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 29A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 0.08Ω |
| Maximum Power Dissipation Pd | 167W |
| Typical Gate Charge Qg @ Vgs | 41nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- This Power MOSFET features a maximum drain source resistance of 0.08 ohms delivering low conduction losses.
- Supports maximum power dissipation of 167 watts for effective thermal management.
- Typical gate charge of 41 nanocoulombs allows for controlled switching performance.
- Rated for an operating temperature range from -55°C to 150°C for use in demanding environments.
- Supports gate-source voltages up to 30 volts, ensuring broad gate drive compatibility.
- Designed for surface mounting to PCB with a compact PowerPAK 10 x 12 package.
- Complies with RoHS environmental standards for regulatory compliance.
- Suitable for industrial motor-drive inverters, server power supplies, telecom equipment, renewable energy DC-DC converters, instrumentation switches, and LED lighting drivers.
Product Description
Vishay SIHK075N60E-T1-GE3 is an E series N-Channel Power MOSFET designed for high-voltage switching and power conversion applications. Featuring a continuous drain current rating of 29 A and a drain-source voltage of 600 V, this device is suitable for compact surface-mount installation in demanding electronic systems.
The device utilizes an 8-pin PowerPAK 10 x 12 package, which provides robust thermal dissipation capabilities up to 167 W, ensuring reliable operation under heavy load conditions. The typical gate charge of 41 nC allows for precise switching control, while the maximum gate-source voltage rating of 30 V ensures safe gate drive operation.
Operating temperature ranges from -55°C to 150°C, making the MOSFET ideal for harsh industrial environments or elevated junction temperatures. It meets RoHS compliance requirements, ensuring environmentally responsible use.
This module finds applications in industrial motor-drive inverters, server and telecom power supplies, DC-DC converters used in renewable energy systems, high-voltage switch controllers in instrumentation, and LED lighting drivers requiring efficient high-voltage switching devices.
High maximum continuous drain current of 29 amps. Robust power dissipation ability at 167 watts. Low on-resistance of 0.08 ohms reduces conduction losses. Wide operating temperature span from -55°C to 150°C. Compact surface-mount PowerPAK 10 x 12 package ensures space-saving design.
Compliant with RoHS standards for environmentally safe use. Suitable for diverse industrial, telecommunications, and renewable energy applications. Explore EnvMart's collection of discrete semiconductors and Power MOSFETs for reliable components engineered for performance and efficiency in demanding technical environments.
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Frequently Asked Questions
The maximum continuous drain current for this model is 29 A.
It has a maximum drain-source voltage rating of 600 V.
This MOSFET supports a maximum power dissipation of 167 watts.
The typical gate charge for this model is 41 nanocoulombs.
It operates within a temperature range of -55°C to 150°C.
This model is designed for surface mounting to a PCB.
It comes in a PowerPAK 10 x 12 package.
The maximum gate-source voltage supported by this model is 30 V.
The maximum drain-source resistance is 0.08 ohms.
It is suitable for applications such as industrial motor-drive inverters, server power supplies, and DC-DC converters.
Yes, it complies with RoHS environmental standards.
This MOSFET has a pin count of 8.
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