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Vishay SQ Type P-Channel Power MOSFET, 2.8 A, 60 V Enhancement Mode, 3-Pin SOT-23 SQ2361ES-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SQ2361ES-T1_GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | SQ |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.177Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 2.8 A ensures efficient power handling.
- Drain-source voltage rating of 60 V suitable for medium voltage circuit designs.
- Compact SOT-23 package with 3 pins for ease of PCB layout and soldering.
- Low maximum drain-source resistance of 0.177 ohms reduces power losses.
- Maximum power dissipation of 2 W supports significant thermal load.
- Typical gate charge of 12 nC at 12 V gate-source voltage enables fast switching.
- Wide operating temperature range from -55°C to 175°C for reliability in harsh environments.
- AEC-Q101 automotive qualification ensures high quality and durability standards.
Product Description
Vishay SQ2361ES-T1_GE3 is a P-Channel Power MOSFET designed for reliable performance in industrial and automotive electronic applications. It features an enhancement mode channel with a maximum continuous drain current of 2.8 A and a drain-source voltage rating of 60 V.
This device utilizes a TrenchFET® structure, offering low on-resistance (maximum 0.177 ohms) which minimizes conduction losses and improves efficiency. Packaged in a compact SOT-23 surface mount form factor with 3 pins, it facilitates easy integration into densely packed circuit boards.
The MOSFET supports a maximum power dissipation of 2 W and operates effectively across a wide temperature range from -55°C up to 175°C, making it suitable for harsh industrial and automotive environments. It complies with AEC-Q101 automotive standards, assuring high reliability for automotive electronic systems.
Key technical parameters include a typical gate charge of 12 nC at a gate-source voltage of 12 V for fast switching performance, a maximum gate-source voltage of 20 V, and a forward voltage drop of 1.2 V that contributes to conduction efficiency. Its compact dimensions measure 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
This MOSFET is ideal for applications in power regulation, switching circuits, automotive electronics, and other power management uses in industrial and laboratory settings. It supports surface mount technology, allowing for automated assembly and high production throughput.
Maximum continuous drain current of 2.8 A for robust power handling. Drain-source voltage rating of 60 V for versatile power applications. Compact and standard SOT-23 packaging for space-constrained designs. Low on-resistance (0.177 Ω) to reduce energy loss.
Wide operating temperature range suitable for automotive-grade usage. AEC-Q101 automotive standard certification for high reliability. Efficient switching with typical gate charge of 12 nC at 12 V. 2 W maximum power dissipation ensuring stable operation under thermal load.
3-pin surface mount device, facilitating compact PCB layouts. Explore more Power MOSFET devices and components in the Electronics & Electricals category on EnvMart for your industrial and lab application needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.8 A.
It has a drain-source voltage rating of 60 V, making it suitable for medium voltage circuit designs.
This power MOSFET is packaged in a compact SOT-23 surface mount form factor with 3 pins.
The maximum power dissipation supported by this model is 2 W, allowing it to handle significant thermal loads.
The typical gate charge at a gate-source voltage of 12 V is 12 nC, enabling fast switching performance.
It operates effectively across a wide temperature range from -55°C to 175°C, suitable for harsh environments.
The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
This device complies with the AEC-Q101 automotive standard, ensuring high reliability for automotive applications.
It features a P-Channel type, designed for enhancement mode operation.
The maximum gate-source voltage for this MOSFET is 20 V.
The maximum drain-source resistance is 0.177 ohms, which helps reduce conduction losses.
This MOSFET is suitable for applications in power regulation, switching circuits, and automotive electronics.
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