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Vishay N-Channel Power MOSFET, 415 A, 100 V Depletion Mode, 8-Pin PowerPAK SO-8DC SiDR220EP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SiDR220EP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8DC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 415A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.00082Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 120W |
| Typical Gate Charge Qg @ Vgs | 46.1nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- High power density suitable for synchronous buck converters and load switching applications.
- Top side cooling feature increases thermal management efficiency.
- Low power loss operation suitable for high efficiency designs.
- Automotive standard AEC-Q101 certified for reliable automotive use.
- Wide operating temperature range from -55°C to 125°C enhances versatility.
- Extremely low drain-source resistance of 0.00082 Ω reduces conduction losses.
- Maximum gate-source voltage of 20 V ensures robust switching performance.
- Typical gate charge of 46.1 nC at Vgs enhances switching speed.
Product Description
Vishay SiDR220EP-T1-RE3 N-Channel Power MOSFET is optimized for high current and voltage applications, with a maximum continuous drain current of 415 A and maximum drain-source voltage of 100 V. This device uses depletion mode channel technology and is housed in an 8-pin PowerPAK SO-8DC surface mount package.
The MOSFET is suited for industrial, automotive, and power management applications where efficiency and thermal performance are vital. Featuring a top-side cooling design, the device allows enhanced heat dissipation critical in high power density synchronous buck converters and load switches.
Operating reliably from -55°C to 125°C, it meets the automotive AEC-Q101 standard, ensuring quality and durability in demanding environments. With an extremely low Rds(on) of 0.00082 Ω, it minimizes conduction losses for enhanced system efficiency.
The typical gate charge of 46.1 nC at gate-source voltage and a maximum gate-source voltage rating of 20 V ensures precise and fast switching characteristics. Additionally, a forward voltage drop of 1.2 V contributes to overall power savings.
High power density device for efficient power conversion. Top side cooling for superior thermal management. Low power loss and fast switching characteristics. Certifications conforming to automotive standards (AEC-Q101).
Wide temperature range for varied operating conditions. Surface mountable 8-pin PowerPAK SO-8DC package.
This Vishay Power MOSFET is ideal for use in industrial electronics, power supplies, automotive electronics, and high power density converter designs. Explore EnvMart's selection for high-quality MOSFETs and power semiconductor devices for your technical requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 415 A.
This N-channel MOSFET has a maximum drain-source voltage rating of 100 V.
It operates reliably within a temperature range of -55°C to 125°C.
This device is housed in an 8-pin PowerPAK SO-8DC surface mount package.
The maximum gate-source voltage for this model is 20 V.
The typical gate charge at gate-source voltage is 46.1 nC.
It features an extremely low drain-source resistance of 0.00082 Ω.
This model is certified to the automotive standard AEC-Q101.
It is suited for industrial electronics, power supplies, automotive electronics, and high power density converter designs.
The maximum power dissipation is rated at 120 W.
The forward voltage drop is 1.2 V.
The package dimensions are 6.15 mm in length and 5.15 mm in width.
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