$0.71
$0.69
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon BSZ N-Channel Power MOSFET, 212 A Continuous Drain Current, 40 V Drain Source Voltage, 8-Pin PQFN BSZ018NE2LSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ018NE2LSATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- High current capacity up to 212 A continuous drain current.
- Maximum drain-source voltage rating of 40 V for robust operation.
- Packaged in a compact 8-pin PQFN surface mount package for efficient mounting.
- Very low on-resistance of 0.7 mΩ to reduce power losses.
- Optimized gate charge of 80 nC typical at Vgs for efficient switching.
- Maximum power dissipation rating of 81 W for reliable performance.
- Wide operating temperature range from -55°C to 175°C.
- Maximum gate-source voltage of 20 V ensuring safe gate drive conditions.
Product Description
Infineon BSZ018NE2LSATMA1 is a high-performance N-Channel Power MOSFET featuring a maximum continuous drain current of 212 A and a maximum drain-source voltage of 40 V. Encased in a compact 8-pin PQFN surface mount package, this MOSFET is engineered for applications requiring low on-resistance and high efficiency.
The device exhibits a very low drain-source resistance of 0.7 mΩ, significantly minimizing conduction losses, alongside a typical gate charge of 80 nC at the gate-source voltage, facilitating fast and efficient switching. It supports a high maximum power dissipation of 81 W, ensuring stable operation under demanding power conditions.
Operating temperature range spans from -55°C to 175°C, allowing deployment in harsh and industrial environments. A maximum gate-source voltage of 20 V guarantees safe and reliable gate driving without damage risks. Compliance with RoHS standards makes this product suitable for environmentally conscious designs.
These MOSFETs are particularly optimized for use in high-performance Buck converter circuits, enhancing power conversion efficiency in electronic and electrical devices. The surface mount PQFN package supports effective thermal management and space-saving PCB designs.
High current rating with up to 212 A continuous drain current. Low on-resistance of 0.7 mΩ minimizes power dissipation. Compact 8-pin PQFN package suitable for surface mounting. Wide operating temperature range from -55°C to 175°C for versatile applications.
Typical gate charge of 80 nC supports high switching speed. Maximum power dissipation of 81 W withstands high loads. Safe gate drive voltage up to 20 V protects device integrity. RoHS compliant ensuring environmental and safety standards.
Ideal for industrial, automotive, and power management applications.
Explore the Infineon Power MOSFET range at EnvMart for reliable and efficient semiconductor solutions designed to meet rigorous performance demands in electronics manufacturing and design.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 212 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
The typical gate charge at Vgs for this unit is 80 nC.
It features a very low on-resistance of 0.7 mΩ, which helps reduce power losses.
The maximum power dissipation rating is 81 W, ensuring reliable performance under load.
This model operates within a temperature range of -55°C to 175°C.
It is packaged in a compact 8-pin PQFN surface mount package.
The maximum gate-source voltage is 20 V, ensuring safe gate drive conditions.
Yes, this product complies with RoHS standards, making it suitable for environmentally conscious designs.
It is particularly optimized for use in high-performance Buck converter circuits.
This MOSFET has a pin count of 8.
The country of origin for this model is India.
Related Products
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$0.71
$0.69
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent