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Infineon N-Channel MOSFET PQFN 8-Pin, 253 A Drain Current, 30 V Voltage, 0.85mOhm Rds, 81 W Power, IQE030N06NM5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE030N06NM5ATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.85mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 730mV |
Key Features
- Surface mount 8-pin PQFN package designed for efficient thermal management.
- Low typical gate charge of 80 nC at gate-source voltage ensures fast switching.
- Maximum drain-source resistance of 0.85 milliohms minimizes conduction losses.
- High maximum power dissipation of 81 W for demanding applications.
- Operational temperature range from -55°C to 150°C for reliability in harsh environments.
- Compliant with RoHS standards and Automotive AEC-Q101 verification.
- Compact footprint with a length of 3.3 mm suitable for dense PCB layouts.
Product Description
Infineon IQE030N06NM5ATMA1 is a high-quality N-Channel MOSFET transistor designed for advanced power electronics. Featuring a maximum continuous drain current of 253 A and maximum drain-source voltage rating of 30 V, this device supports demanding load currents in compact form.
Housed in an 8-pin PQFN surface mount package measuring 3.3 mm in length, it offers excellent thermal dissipation and high power density. The low on-resistance of 0.85 milliohms and typical gate charge of 80 nC at Vgs ensure high switching efficiency and reduced power losses.
This MOSFET supports a wide operating temperature range from -55°C to 150°C, making it suitable for automotive and industrial applications requiring ruggedness and reliability. Additionally, the device meets RoHS compliance and Automotive AEC-Q101 quality standards, ensuring dependable performance in safety-critical systems.
It can handle up to 81 W of power dissipation, enabling use in power management, motor control, and switching regulator circuits. The low forward voltage drop of 730 mV further enhances efficiency in power conversion applications.
Surface mount 8-pin PQFN package optimized for thermal and layout efficiency. Maximum drain current of 253 A at continuous operation. Low Rds(on) value of 0.85 milliohms minimizes conduction losses. Typical gate charge of 80 nC for fast switching speed.
Operating temperature range from -55°C to 150°C ensuring robustness. RoHS compliant and qualified to Automotive AEC-Q101 standards. Compact 3.3 mm length suitable for space-constrained designs.
This MOSFET is ideal for use in power electronics within industrial, automotive, and consumer electronics sectors where high current carrying and switching performance are desired. Its robust specifications offer design engineers a reliable component for enhancing system efficiency and thermal management.
EnvMart customers can explore a wide range of Infineon semiconductors and discrete MOSFET devices using our comprehensive catalog to find high-quality electronic components for their projects and production lines.
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Frequently Asked Questions
The maximum continuous drain current for this model is 253 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
The maximum drain-source resistance (Rds(on)) is 0.85 milliohms, which minimizes conduction losses.
The typical gate charge at gate-source voltage (Vgs) is 80 nC, ensuring fast switching.
It operates within a temperature range of -55°C to 150°C, making it suitable for harsh environments.
The package type is PQFN with a length of 3.3 mm, designed for efficient thermal management.
This model can handle up to 81 W of power dissipation, suitable for demanding applications.
Yes, it is RoHS compliant and qualified to Automotive AEC-Q101 standards.
The forward voltage drop is 730 mV, which enhances efficiency in power conversion applications.
This model features a surface mount design, optimized for PCB layouts.
It is ideal for use in power management, motor control, and switching regulator circuits in industrial and automotive sectors.
The maximum gate-source voltage (Vgs) for this device is 16 V.
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