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Infineon N-Channel MOSFET SuperSO8 5 x 6 Surface Mount, 381 A, 40 V, 0.7 mΩ Rds(on), 81 W Power Dissipation BSC026NE2LS5ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSC026NE2LS5ATMA1
Mount Type Surface
Series BSC0
Maximum Operating Temperature 175°C
Package Type SuperSO8 5 x 6
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 381A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • Features very low on-resistance of 0.7 milliohms for efficient power conversion.
  • Maximum power dissipation up to 81 watts for robust operation.
  • Wide operating temperature range from -55°C to 175°C for reliability.
  • Surface mount package type ensures compact and easy PCB integration.
  • Typical gate charge of 80 nanocoulombs at 20 V gate-source voltage for fast switching.
  • Complies with RoHS standards, halogen-free, and utilizes Pb-free lead plating.
  • Optimized for high performance buck converters and power management applications.
  • JEDEC qualified and 100% avalanche tested for durability and stability.

Product Description

The Infineon BSC026NE2LS5ATMA1 is a high-performance N-channel MOSFET designed for demanding power electronic applications. It features a maximum continuous drain current of 381 amperes and a drain-to-source voltage rating of 40 volts. Packaged in an 8-pin SuperSO8 5 x 6 surface mount format, it is suitable for compact and efficient power circuits.

This MOSFET provides an exceptionally low on-state resistance of 0.7 milliohms when driven at 4.5 V gate-source voltage, enabling high efficiency and low conduction losses. Its maximum power dissipation reaches 81 watts, supporting robust operation in high current environments.

With a wide operating temperature range from -55°C to 175°C, it ensures reliability in a variety of industrial and commercial applications including desktop servers, high power density voltage regulators, and automotive electronics. The device features typical gate charge of 80 nanocoulombs at 20 volts gate voltage, allowing for fast switching performance optimized for buck converters and energy-efficient power supplies.

Very low Rds(on) value for enhanced power efficiency. High avalanche energy capability for rugged operation in switching circuits. Pb-free lead plating and halogen-free construction compliant with environmental standards.

JEDEC qualification and 100% avalanche testing ensure quality and reliability. Suitable for industrial, data center, automotive, and manufacturing applications. Compact SuperSO8 5 x 6 package enables space-saving circuit design.

RoHS-compliant to meet global environmental regulations.

Infineon's BSC026NE2LS5ATMA1 MOSFET is ideal for engineers looking to implement high current and high efficiency switching solutions in demanding environments. It balances performance, reliability, and environmental consciousness. This product is categorized under MOSFETs and discrete semiconductors in the electronics sector. Browse more industrial and electronic components at EnvMart to find compatible power management devices and enhance your projects.

Infineon N-Channel MOSFET SuperSO8 5 x 6 Surface Mount, 381 A, 40 V, 0.7 mΩ Rds(on), 81 W Power Dissipation BSC026NE2LS5ATMA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 381 amperes.

It features a very low on-resistance of 0.7 milliohms when driven at a gate-source voltage of 4.5 V.

The maximum power dissipation is up to 81 watts, supporting robust operation in high current environments.

The operating temperature range is from -55°C to 175°C, ensuring reliability in various applications.

It is packaged in an 8-pin SuperSO8 5 x 6 surface mount format, suitable for compact circuit designs.

The typical gate charge is 80 nanocoulombs at a gate-source voltage of 20 volts, allowing for fast switching.

The maximum gate-source voltage is 20 volts.

Yes, it complies with RoHS standards, is halogen-free, and utilizes Pb-free lead plating.

It is optimized for high-performance buck converters and power management applications.

This model has a pin count of 8.

The maximum drain-source voltage rating is 40 volts.

The country of origin for this MOSFET is India.

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