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Infineon N-Channel MOSFET 212 A, 40 V, 8-Pin PQFN Surface Mount BSZ021N04LS6ATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BSZ021N04LS6ATMA1
Mount Type Surface
Series BSZ
Maximum Operating Temperature 175°C
Package Type PQFN
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 212A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 0.7mΩ
Channel Mode N
Maximum Power Dissipation Pd 81W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1V

Key Features

  • This MOSFET offers a low drain-source resistance of 0.7 milliohms for efficient power handling.
  • Maximum power dissipation rating is 81 watts ensuring reliable thermal performance.
  • Operating temperature ranges from -55°C to 175°C supporting harsh environments.
  • Typical gate charge at gate-source voltage is 80 nanocoulombs, enabling fast switching.
  • Designed with a surface mount package type for easy PCB assembly.
  • Compliant with RoHS standards, suitable for modern electronic assembly requirements.
  • Forward voltage is rated at 1 volt, optimizing conduction efficiency.
  • Not approved for automotive applications.

Product Description

The Infineon BSZ021N04LS6ATMA1 is a high-performance N-Channel MOSFET designed for power electronics applications where efficient switching and low losses are critical.

Featuring a continuous drain current of 212 amperes and a maximum drain-source voltage of 40 volts, this MOSFET is well-suited for demanding industrial and consumer electronics power stages.

The 8-pin PQFN surface mount package provides a compact footprint combined with excellent thermal performance, making it ideal for high density applications.

Key electrical characteristics include a very low on-resistance of 0.7 milliohms and a maximum power dissipation capability of 81 watts, enabling high efficiency and reliable operation under thermal stress.

The device supports a wide operational temperature range from -55°C to 175°C, ensuring durability in automotive, industrial, and commercial environments where extreme temperatures are common.

With typical gate charge of 80 nanocoulombs at 20 V gate-source voltage, the MOSFET offers fast switching characteristics which reduce switching losses and improve system efficiency.

Compliance with RoHS standards ensures the MOSFET meets current environmental and safety regulations for electronic components. This MOSFET is tailored for industrial power management, laboratory equipment, consumer electronics, and power supply designs.

It supports surface mount assembly techniques improving manufacturing flexibility and performance. While not qualified for automotive standards, it remains suitable for a wide range of commercial and industrial applications.

Infineon products provide industry-leading quality and reliability, making the BSZ021N04LS6ATMA1 a dependable choice for engineers and designers. Explore more Infineon semiconductor products at EnvMart for comprehensive power management solutions.

Infineon N-Channel MOSFET 212 A, 40 V, 8-Pin PQFN Surface Mount BSZ021N04LS6ATMA1
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Frequently Asked Questions

The maximum continuous drain current for the Infineon BSZ021N04LS6ATMA1 is 212 amperes.

This MOSFET has a maximum drain-source voltage of 40 volts.

The typical gate charge at a gate-source voltage of 20 V is 80 nanocoulombs.

The maximum power dissipation rating is 81 watts, ensuring reliable thermal performance.

It operates within a temperature range of -55°C to 175°C.

The on-resistance is rated at 0.7 milliohms, which contributes to efficient power handling.

It is designed with an 8-pin PQFN surface mount package type for easy PCB assembly.

Yes, it is compliant with RoHS standards, suitable for modern electronic assembly requirements.

It is tailored for industrial power management, laboratory equipment, consumer electronics, and power supply designs.

The forward voltage is rated at 1 volt, optimizing conduction efficiency.

The maximum gate-source voltage is 20 volts.

The country of origin for this model is India.

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