$0.52
$0.50
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Nexperia N-Channel Enhancement MOSFET 11.4 A 30 V Surface Mount 8-Pin MLPAK33 PXN8R3-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXN8R3-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11.4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Utilizes Trench MOSFET technology for high efficiency and performance.
- Logic-level compatible design allows easy interfacing with low-voltage devices.
- Offers ultra-low gate charge (QG) and gate-drain charge (QGD) for improved switching efficiency.
- Provides superfast switching with soft recovery to reduce switching losses.
- Low spiking and ringing characteristics make it ideal for low electromagnetic interference (EMI) designs.
- Wide operating temperature range from -55°C to 150°C ensures reliability in harsh environments.
- Maximum power dissipation rated at 12.5 W supports demanding thermal conditions.
- Surface-mount MLPAK33 package with compact 3.3 x 3.3 mm footprint for space-saving PCB layouts.
Product Description
The Nexperia PXN8R3-30QLJ is an N-Channel enhancement mode MOSFET designed with advanced Trench MOSFET technology to provide superior performance in power switching and amplification applications. This device is housed in a compact 8-pin MLPAK33 (SOT8002) surface-mounted plastic package with a 3.3 x 3.3 mm footprint, making it suitable for modern PCB designs requiring minimal space.
With a maximum continuous drain current of 11.4 A and a maximum drain-source voltage rating of 30 V, the PXN8R3-30QLJ efficiently handles moderate power loads. The MOSFET features ultra-low gate charge (QG) and gate-drain charge (QGD), which reduces switching losses and improves system efficiency at higher switching frequencies.
Its logic-level compatibility ensures easy control via low-voltage gate drive signals without additional level shifting circuitry. The device supports superfast switching with soft recovery, minimizing switching noise and losses, which is crucial for high-speed switching power supplies and motor driver circuits.
Engineered for robust operation, this MOSFET withstands a wide temperature range from -55°C to 150°C and has a maximum power dissipation capacity of 12.5 W, ensuring reliable operation in demanding industrial, automotive, and consumer electronics contexts.
Advanced Trench MOSFET technology for efficient power management. Logic-level compatible gates for easy integration with modern control logic circuits. Ultra-low gate charge minimizes switching losses. Superfast switching with soft recovery reduces EMI and power dissipation.
Compact MLPAK33 surface-mount package optimizes PCB space. Wide operational temperature range: -55°C to 150°C. Maximum power dissipation of 12.5 W suitable for industrial applications. Rated for continuous drain current up to 11.4 A and voltage up to 30 V.
This Nexperia MOSFET is ideal for applications in industrial power control, automotive systems, consumer electronics power stages, and any designs requiring high efficiency and reliable switching performance.
Explore Nexperia power semiconductors and MOSFET devices at EnvMart for trusted performance and extensive technical support.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of the PXN8R3-30QLJ is 11.4 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It is housed in a compact 8-pin MLPAK33 package.
The operating temperature range for this model is from -55°C to 150°C.
The maximum power dissipation rated for this MOSFET is 12.5 W.
This model is an N-Channel enhancement mode MOSFET.
The PXN8R3-30QLJ features ultra-low gate charge (QG) and gate-drain charge (QGD), which improve switching efficiency and reduce switching losses.
The MLPAK33 package provides a compact footprint of 3.3 x 3.3 mm, optimizing PCB space for modern designs.
The maximum gate-source voltage (Vgs) for the PXN8R3-30QLJ is 20 V.
This MOSFET is suitable for applications in industrial power control, automotive systems, and consumer electronics power stages.
The maximum drain-source resistance (Rds) is rated at 13.6 mΩ.
This MOSFET utilizes advanced Trench MOSFET technology for efficient power management and performance.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
Recently Viewed Products
$0.52
$0.50
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent