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Infineon IPL N-Channel MOSFET 4.5 A 800 V 5-Pin ThinPAK 5x6 IPLK80R2K0P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 6.42mm |
| Model | IPLK80R2K0P7ATMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 5x6 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.2mΩ |
| Maximum Power Dissipation Pd | 43W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 3V |
| Forward Voltage Vf | 900mV |
Key Features
- Optimized for flyback applications including adapters, chargers, and industrial power supplies.
- Offers up to 0.6% efficiency gain and reduces MOSFET temperature by 2°C to 8°C compared to predecessors.
- Features best-in-class RDS(on), gate charge, and low EMI for improved performance.
- Integrated Zener diode for robust ESD protection enhances device reliability.
- Compact ThinPAK 5x6 package with a low profile of 1 mm enables high power density designs.
- Meets automotive standard AEC-Q101 and RoHS compliance.
- Operates within a temperature range from -55°C to 150°C, suitable for demanding environments.
Product Description
Infineon IPLK80R2K0P7ATMA1 is a high-performance N-Channel MOSFET designed primarily for flyback applications including adapters, chargers, audio switched-mode power supplies (SMPS), auxiliary power units, and industrial power systems. It supports a maximum continuous drain current of 4.5 A and a maximum drain-source voltage of 800 V.
The device delivers up to 0.6% efficiency gain and keeps MOSFET temperature between 2°C and 8°C lower compared to its predecessor and competitor parts, contributing to enhanced system reliability and efficiency. Its best-in-class figure of merit (FOM) includes an optimized RDS(on), reduced gate charge (Qg), and minimized capacitances (Ciss, Coss), enabling superior switching performance and reduced power losses.
Featuring an integrated Zener diode for ESD protection, this MOSFET ensures robustness in demanding applications. The ThinPAK 5x6 surface-mount package offers a very small footprint of 5 x 6 mm² with a low profile height of 1 mm, allowing designers to achieve higher power density within limited PCB space.
This component is fully RoHS compliant and meets AEC-Q101 automotive standards, making it suitable for automotive and industrial applications. Operating temperature ranges from -55°C to 150°C support use in harsh environments.
Optimized for flyback converters including adapters and chargers. High efficiency with reduced switching losses. Low parasitic capacitance for enhanced performance. Integrated Zener diode for ESD protection. Compact ThinPAK 5x6 package with small footprint and low profile.
AEC-Q101 automotive qualification. Wide operating temperature range from -55°C to 150°C.
This MOSFET is ideal for industrial, power management, consumer electronics, and automotive applications requiring efficient, small form-factor power switching solutions. Explore more about Infineon MOSFETs and related products on EnvMart to fit your technical and industrial needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 4.5 A.
This MOSFET supports a maximum drain-source voltage of 800 V.
It operates within a temperature range from -55°C to 150°C.
The IPLK80R2K0P7ATMA1 is housed in a ThinPAK 5x6 package.
The dimensions of the package are 6.42 mm in length and 5 mm in width.
Yes, it features an integrated Zener diode for ESD protection, enhancing device reliability.
It meets the AEC-Q101 automotive standard, making it suitable for automotive applications.
The typical gate charge (Qg) at Vgs is 80 nC.
The maximum power dissipation is 43 W.
The maximum gate-source voltage (Vgs) is 3 V.
The forward voltage (Vf) is 900 mV.
It is RoHS compliant, ensuring it meets environmental standards.
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