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Infineon BSZ N-Channel MOSFET 212 A 40 V 8-Pin PQFN Surface Mount BSZ018NE2LSIATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSZ018NE2LSIATMA1 |
| Mount Type | Surface |
| Series | BSZ |
| Maximum Operating Temperature | 175°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 212A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Comes in an 8-pin PQFN surface mount package.
- Maximum continuous drain current is 212 amperes for heavy-duty performance.
- Low drain-source resistance of 0.7 milliohms enhances efficiency.
- Includes monolithic integrated Schottky-like diode for improved switching.
- Typical gate charge at gate-source voltage is 80 nanocoulombs for fast switching.
- Maximum power dissipation rated at 81 watts supports high load conditions.
- Operates safely between -55°C and 175°C temperature range.
- Maximum gate-source voltage rating is 20 volts.
Product Description
Infineon BSZ018NE2LSIATMA1 is a high-performance N-Channel MOSFET designed specifically for Buck converter applications. Featuring a maximum continuous drain current of 212 amperes and a drain-source voltage rating of 40 volts, this device supports robust power management in industrial and electronic applications.
The MOSFET comes in a compact 8-pin PQFN surface mount package suitable for automated assembly and space-constrained designs. It integrates a monolithic Schottky-like diode, enhancing switching performance and reducing losses.
With a low maximum drain-source resistance of 0.7 milliohms, the device ensures minimum conduction losses. The typical gate charge at 80 nanocoulombs enables efficient and fast switching, making it optimal for high-frequency power electronics.
Rated for maximum power dissipation of 81 watts, this MOSFET is suitable for demanding loads. It operates reliably within a wide temperature range from -55°C to 175°C, supporting applications in automotive, industrial, and consumer electronics sectors.
The device is halogen-free following IEC61249-2-21 specifications and compliant with RoHS directives, ensuring environmental safety in electronics manufacturing. Maximum gate-source voltage is 20 volts while the forward voltage drops only 1 volt, contributing to energy-efficient designs.
Comes in surface mount 8-pin PQFN package for compact PCB layouts. Designed for power electronics such as Buck converters and motor drives. Suitable for industrial, automotive, and commercial electronic devices. High continuous drain current with low Rds(on) values reduces power loss.
Wide operating temperature range ensures reliability in harsh environments.
EnvMart offers this Infineon MOSFET as a reliable component for semiconductor applications requiring high current handling and efficient power management. Explore more power semiconductor devices and MOSFETs in our Electronics & Electricals category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 212 amperes, making it suitable for heavy-duty performance in power management applications.
This N-Channel MOSFET has a maximum drain-source voltage rating of 40 volts, allowing it to handle significant voltage levels in various applications.
It comes in an 8-pin PQFN surface mount package, which is suitable for automated assembly and compact PCB layouts.
The typical gate charge at gate-source voltage for this model is 80 nanocoulombs, facilitating efficient and fast switching.
The maximum power dissipation rated for this device is 81 watts, supporting high load conditions in demanding applications.
It operates reliably within a temperature range of -55°C to 175°C, making it suitable for harsh environments.
The maximum gate-source voltage rating for this MOSFET is 20 volts, which is essential for controlling the device effectively.
The maximum drain-source resistance (Rds) is 0.7 milliohms, which enhances efficiency by minimizing conduction losses.
Yes, it includes a monolithic integrated Schottky-like diode, which improves switching performance and reduces losses.
This device is compliant with RoHS directives and is halogen-free according to IEC61249-2-21 specifications, ensuring environmental safety.
It is designed for power electronics applications such as Buck converters and motor drives, suitable for industrial, automotive, and commercial electronic devices.
The forward voltage drop for this model is 1 volt, contributing to energy-efficient designs in power management systems.
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