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Vishay N-Channel Power MOSFET 60 V 42.4 A Depletion Mode 8-Pin PowerPAK SO-8 SIR576DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIR576DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 42.4A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.02Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- The device is housed in an 8-pin surface-mount PowerPAK SO-8 package.
- Maximum drain-source resistance (Rds) is 0.02 Ohm for efficient power control.
- Operation temperature ranges from -55°C to 125°C, suitable for demanding environments.
- The MOSFET supports a maximum gate-source voltage of 20 V and maximum power dissipation of 83 W.
- Typical gate charge is 56 nC at specified operating voltage.
- Designed with automotive-grade AEC-Q101 standard compliance.
- Its trenchFET technology enables very low resistance and high performance in power supply and motor control applications.
- Ideal for synchronous rectification and other industrial power management uses.
Product Description
Vishay SIR576DP-T1-RE3 is an N-Channel Power MOSFET offering a maximum continuous drain current of 42.4 A and a maximum drain-source voltage of 60 V. It operates in depletion mode and comes in a compact 8-pin PowerPAK SO-8 surface mount package, making it suitable for space-constrained industrial and automotive electronics applications.
This device features an exceptionally low drain-source resistance of 0.02 Ohm, providing high efficiency and reduced heat generation in power circuits. It can withstand operating temperatures from -55°C to 125°C and supports a maximum gate-source voltage of 20 V, ensuring robust control and reliability under harsh conditions.
The MOSFET is designed according to the automotive AEC-Q101 standard, enabling use in automotive systems along with general industrial uses such as power supply management, motor drive control, and synchronous rectification. With a typical gate charge of 56 nC, it offers efficient switching performance to optimize power consumption.
Its trenchFET technology delivers enhanced electrical characteristics, aiding in the design of efficient and compact power circuits in industrial manufacturing, automotive electronics, HVAC control systems, and power management equipment.
The device is housed in an 8-pin PowerPAK SO-8 package for surface mounting. Maximum power dissipation rated at 83 W supports high power applications. Wide operating temperature range from -55°C to 125°C ensures durability in harsh environments.
Low Rds(on) of 0.02 Ohm minimizes conduction losses. Complies with automotive standards for assured quality. Typical gate charge of 56 nC allows fast and efficient switching. Designed for industrial and automotive power electronics applications.
Enables high efficiency in synchronous rectification and motor drive control.
This MOSFET is essential for engineers designing advanced power electronics systems requiring reliable, high-performance, low-loss switching devices. It is widely used in semiconductor assemblies for industrial tools, automotive electronics, and energy management systems.
Explore the Vishay product range on EnvMart for comprehensive industrial-grade electronic components meeting stringent quality and performance needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 42.4 A.
It can handle a maximum drain-source voltage of 60 V.
The typical gate charge is 56 nC at the specified operating voltage.
The maximum power dissipation rating is 83 W.
The operating temperature range is from -55°C to 125°C.
The maximum drain-source resistance (Rds) is 0.02 Ohm.
It comes in an 8-pin PowerPAK SO-8 surface mount package.
It complies with the automotive AEC-Q101 standard.
The maximum gate-source voltage is 20 V.
This device features an N-channel configuration.
It is suitable for power supply management, motor drive control, and synchronous rectification in industrial and automotive applications.
The width of this model is 5.15 mm.
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