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Vishay N-Channel MOSFET 410 A, 30 V Depletion Mode, 4-Pin PowerPAK SO-8L SQJ186EP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SQJ186EP-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8L |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 410A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.02Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET uses depletion mode with a channel type of N.
- Maximum power dissipation is 255 W, suitable for high power density applications.
- Typical gate charge at Vgs is 43 nC enabling efficient switching.
- Pin count is 4, with surface mount type and compact dimensions (6.15mm x 4.9mm).
- Maximum drain-source resistance is a low 0.02 Ω.
- Operating temperature ranges from -55°C to 125°C for robust performance.
- Forward voltage is 1.1 V and maximum gate-source voltage tolerance is 20 V.
- Automotive qualified with AEC-Q101 standard and UIS tested for reliability.
Product Description
The Vishay SQJ186EP-T1_GE3 is a high-performance N-Channel MOSFET designed for demanding power electronics applications. Featuring a maximum continuous drain current of 410 A and a drain-source voltage rating of 30 V, it is ideal for automotive and industrial use where high current conduction and robust switching are necessary.
Packaged in a compact 4-pin PowerPAK SO-8L surface-mount package measuring 6.15 mm in length and 4.9 mm in width, this MOSFET supports efficient PCB layout and thermal management. The device operates in depletion mode with an exceptionally low on-resistance of 0.02 Ω, minimizing power loss during conduction.
Designed to operate reliably across a wide temperature range from -55°C to 125°C, it withstands harsh environmental conditions. The MOSFET supports a gate-source voltage up to 20 V and typical gate charge of just 43 nC, enabling fast switching and high efficiency in power conversion circuits.
This model is automotive qualified to AEC-Q101 standards and UIS tested, ensuring compliance with stringent reliability and safety requirements for automotive electronics. N-Channel depletion mode MOSFET for high current applications.
410 A continuous drain current at 30 V maximum voltage. Compact 4-pin PowerPAK SO-8L surface-mount package. Low drain-source resistance of 0.02 Ω to reduce conduction losses. Wide operating temperature range from -55°C to 125°C.
Typical gate charge of 43 nC for efficient switching. Automotive AEC-Q101 qualified and UIS tested for automotive readiness.
This MOSFET is suitable for industrial power management, automotive electronics, high current switching, and other high power density applications. Explore the Electronics & Electricals categories on EnvMart for similar Power MOSFETs and complementary semiconductor components.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 410 A.
The maximum drain-source voltage rating is 30 V.
The typical gate charge at Vgs is 43 nC.
The maximum drain-source resistance is 0.02 Ω.
The package dimensions are 6.15 mm in length and 4.9 mm in width.
The operating temperature range is from -55°C to 125°C.
This MOSFET is automotive qualified to AEC-Q101 standards.
The maximum power dissipation rating is 255 W.
It uses an N-channel type with a depletion mode.
The maximum gate-source voltage tolerance is 20 V.
The forward voltage is 1.1 V.
This MOSFET has a pin count of 4.
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