Vishay N-Channel MOSFET 12.7 A, 25 V Enhancement, 8-Pin SOIC SI4116DY-T1-GE3

Vishay SI4116DY-T1-GE3 is a high-performance N-Channel MOSFET designed for power management in electronic circuits. It handles a maximum continuous drain current of 12.7 A and a drain-source voltage of up to 25 V, making it suitable for switching and amplification tasks in industrial, automotive, and consumer electronics applications.

This MOSFET is housed in an 8-pin SOIC package, allowing surface mount technology (SMT) assembly with compact footprint and efficient thermal management. Its low drain-source resistance (9 mΩ max) yields low conduction losses, enhancing energy efficiency in power circuits.

Key electrical characteristics include an enhancement mode channel, a maximum power dissipation of 2.5 W, and a typical gate charge of 37 nC, which contribute to fast switching and low heat generation. The device supports robust operation across a wide temperature range from -55°C to 150°C, suitable for demanding environments.

The gate voltage rating (-12 V to +12 V) protects against voltage spikes, and the forward voltage drop of 1.1 V helps reduce energy loss during conduction. Its compact physical size (5 mm length, 4 mm width, and 1.55 mm height) makes it suitable for dense circuit boards.

This product is manufactured in China and has no automotive certification or special standards compliance listed, reflecting its general industrial use case. This MOSFET is ideal for industrial power control, DC-DC converters, motor drives, and load switching applications.

Commonly used in electronic component assemblies requiring reliable N-channel switching devices with low on-resistance and moderate power handling. Surface mount configuration supports automated PCB assembly processes, enhancing production efficiency.

Its specifications ensure suitability for laboratory, manufacturing, and commercial electronic design tasks. Discover more semiconductors and MOSFET solutions with Vishay at EnvMart for your precise electronic design needs.