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Infineon IMW1 N-Channel MOSFET, 4.7 A Continuous Current, 1.2 kV Drain Source Voltage, Enhancement Mode IMW120R350M1HXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IMW120R350M1HXKSA1 |
| Mount Type | Through Hole |
| Series | IMW1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.7A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 350mΩ |
| Channel Mode | Enhancement |
Key Features
- The device operates as an enhancement mode MOSFET with a low 350 mΩ drain-source resistance.
- Designed with a 3-pin through-hole TO-247 package suitable for power applications.
- Features state-of-the-art trench semiconductor process for optimized performance and reliability.
- Offers low gate charge, low device capacitance, and temperature-independent switching losses.
- The MOSFET includes a robust, low-loss body diode rated for hard commutation.
- Ideal for industrial and power electronics applications requiring high voltage and efficiency.
- Enables easy and simple gate drive with a wide gate-source voltage range.
- Temperature independent turn-off switching losses improve overall switching performance.
Product Description
Infineon IMW120R350M1HXKSA1 is an N-Channel MOSFET designed for power and industrial electronics applications. It supports a maximum continuous drain current of 4.7 A and a maximum drain-source voltage of 1.2 kV. The device operates in enhancement mode and is housed in a 3-pin TO-247 through-hole package, providing ease of mounting and robust thermal management.
This MOSFET utilizes Infineon's CoolSiC™ trench semiconductor technology, combining excellent switching performance with outstanding reliability. The device exhibits the lowest gate charge and device capacitance among 1200 V class switches, eliminating reverse recovery losses of the internal body diode, which enhances efficiency and reduces thermal stress.
The MOSFET features a benchmark high threshold voltage of over 4 V and allows for a 0 V turn-off gate voltage, facilitating straightforward gate driving. Its low loss body diode is specifically rated for hard commutation, making it suitable for demanding applications.
The temperature-independent turn-off switching losses reduce energy dissipation during switching cycles, resulting in improved system efficiency and reliability over a wide range of operating temperatures.
The device is designed for applications in industrial power supplies, inverters, motor drives, and renewable energy systems. Its high voltage and current ratings make it suitable for use in demanding electrical environments where efficiency and thermal management are critical.
The through-hole TO-247 package ensures easy integration into existing PCB layouts and provides excellent thermal conductivity.
Set your designs apart with Infineon's IMW120R350M1HXKSA1 MOSFET, engineered to deliver efficient power switching with enhanced reliability. Whether utilized in industrial automation, renewable energy, or power electronics manufacturing, this MOSFET supports robust performance and extended operational lifetimes.
Explore more power semiconductor and MOSFET products with EnvMart's comprehensive catalog, supporting your industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 4.7 A.
It has a maximum drain-source voltage rating of 1.2 kV.
This model is housed in a TO-247 package type, which is a 3-pin through-hole design.
The maximum drain-source resistance is 350 mΩ.
This MOSFET features an N-channel type.
Key features include low gate charge, low device capacitance, and a temperature-independent switching loss profile.
It is suitable for industrial power supplies, inverters, motor drives, and renewable energy systems.
The threshold voltage is over 4 V, allowing for a 0 V turn-off gate voltage.
The body diode is rated for hard commutation, which enhances efficiency and reduces thermal stress.
It utilizes Infineon's CoolSiC™ trench semiconductor technology for optimized performance and reliability.
The specific dimensions of the TO-247 package are not provided, but it is designed for easy integration into existing PCB layouts.
The country of origin for this MOSFET is India.
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