Infineon N-Channel MOSFET 28 A 80 V 3-Pin TO-220 IPP024N08NF2SAKMA1

Infineon IPP024N08NF2SAKMA1 is a high-performance N-Channel power MOSFET optimized for a wide range of industrial, electronic, and power applications requiring robust switching and conduction characteristics. This 3-pin device features a TO-220 package with through-hole mount design, providing excellent thermal performance and mechanical stability.

Designed to handle a continuous drain current of 28 A and withstand a maximum drain-source voltage of 80 V, this MOSFET is well-suited for power management in motor drivers, power converters, and switching regulators. Its low drain-source resistance of 2.4 mΩ reduces conduction losses, improving overall system efficiency.

The device has a typical gate charge of 89 nC at the specified gate voltage, enabling rapid switching with reduced gate drive losses. It supports a maximum power dissipation of 214 W, ensuring reliable operation under high load conditions. Its operational temperature range from -55°C to 175°C suits demanding industrial, automotive, and HVAC environments.

The compact dimensions (length: 10.36 mm, width: 4.57 mm, height: 9.45 mm) and standard pinout make the IPP024N08NF2SAKMA1 an ideal drop-in replacement for various N-Channel MOSFET applications. It has passed 100% avalanche testing for enhanced ruggedness against voltage spikes.

Supports continuous drain current up to 28 A for demanding power applications. Operates at a maximum drain-source voltage of 80 V for versatility. Features a 3-Pin TO-220 package with through-hole mount for secure installation.

Low maximum drain-source resistance of 2.4 mΩ reduces power loss and heat dissipation. Maximum gate-source voltage is 20 V ensuring robust switching performance. Typical gate charge of 89 nC supports fast switching speeds.

Maximum power dissipation at 214 W enables handling of high power loads. Wide operating temperature range from -55°C to 175°C for industrial environments. Compact dimensions: length 10.36 mm, width 4.57 mm, height 9.45 mm.

100% avalanche tested for reliability under inductive load conditions.

This MOSFET suits applications in industrial power supplies, motor control, electronic switching, and power conversion circuits, meeting the demands for durability and high power efficiency. The product is a new component with high reliability authorized by Infineon and originates from India.

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