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Vishay P-Channel MOSFET, 1.2 A, -60 V Drain Source Voltage, 3-Pin SOT-23 Surface-Mount SI2309CDS-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2309CDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2309CDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.2A |
| Maximum Drain Source Voltage Vds | -60V |
| Maximum Drain Source Resistance Rds | 345mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 2.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Type P channel MOSFET for efficient switching in low- to moderate-current applications.
- Maximum drain-source voltage rating of -60 V ensures high-voltage switching capability.
- Low on-resistance of 345 milliohms reduces conduction losses and improves efficiency.
- Typical gate charge of 2.7 nanocoulombs allows for fast switching transitions.
- Power dissipation rating of 1.7 watts manages thermal load under normal operation.
- Operating temperature range from -55°C to 150°C suitable for industrial environments.
- Supplied in compact SOT-23 surface-mount package with 3 pins for automated PCB assembly.
- Gate-source voltage limits of ±20 V prevent damage to the gate oxide.
Product Description
Vishay SI2309CDS-T1-GE3 is a P-Channel Enhancement MOSFET specifically designed for compact, surface-mount applications requiring robust load control and switching capabilities. This device supports a maximum continuous drain current of 1.2 A and a drain-source voltage rating of -60 V, making it suitable for various moderate power electronics circuits.
The MOSFET’s low Rds(on) of 345 mΩ minimizes power losses and heat generation, while its typical gate charge of 2.7 nC enables rapid switching necessary for efficient power control. Its power dissipation capability of 1.7 W allows it to operate reliably under normal thermal conditions within a broad ambient temperature range from -55°C to 150°C, covering industrial and consumer electronics applications.
The device is housed in a standard SOT-23 3-pin surface-mount package, facilitating automated PCB assembly and compact circuit design. Designers must observe the maximum gate-to-source voltage of ±20 V to avoid damage to the device gate oxide. This MOSFET is not certified as automotive grade and should be avoided for automotive applications requiring such qualification.
Common uses include high-side switching in handheld devices, battery protection circuits to prevent reverse current flow, and signal-level load switching in power management electronics. It is well-suited for consumer electronics, industrial controls, and other moderate current switching applications.
Type P channel enhancement MOSFET for efficient switching. Max drain-source voltage of -60 V supports higher voltage switching. Continuous drain current of 1.2 A supports modest loads. Low on-resistance 345 mΩ reduces conduction losses.
Typical gate charge 2.7 nC for faster switching transitions. Power dissipation rated at 1.7 W for thermal management. Operating temperature range -55°C to 150°C for wide environment suitability. Compact 3-pin SOT-23 surface-mount package for automated assembly.
Gate-source voltage limits ±20 V must be observed to protect gate oxide.
Explore our Electronics & Electricals catalog for more Vishay MOSFETs and discrete semiconductor solutions designed for industrial, manufacturing, and consumer electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 1.2 A.
This model has a maximum drain-source voltage rating of -60 V.
The on-resistance (Rds(on)) is 345 milliohms, which helps reduce conduction losses.
The typical gate charge for this model is 2.7 nanocoulombs.
It has a power dissipation rating of 1.7 watts, allowing it to manage thermal loads effectively.
The operating temperature range is from -55°C to 150°C, making it suitable for various environments.
It is housed in a compact SOT-23 surface-mount package with 3 pins.
The maximum gate-source voltage limits are ±20 V, which must be observed to prevent damage.
No, this MOSFET is not certified as automotive grade and should be avoided for automotive applications.
Common applications include high-side switching in handheld devices and battery protection circuits.
The dimensions are 1.02 mm in height, 3.04 mm in length, and 1.4 mm in width.
This model complies with RoHS standards.
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