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Vishay N-Channel 100 V MOSFET, 150 A Maximum Continuous Drain Current, TO-263 Package, Surface Mount, 3-Pin SUM70042E-GE3

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Vishay N-Channel 100 V MOSFET, 150 A Maximum Continuous Drain Current, TO-263 Package, Surface Mount, 3-Pin SUM70042E-GE3

Name: Vishay N-Channel 100 V MOSFET, 150 A Maximum Continuous Drain Current, TO-263 Package, Surface Mount, 3-Pin SUM70042E-GE3
Brand: Vishay
SKU: 293738
Price: 2.62 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	4.826mm
Length	15.875mm
Model	SUM70042E-GE3
Width	10.414mm
Mount Type	Surface
Series	N-Channel 100 V
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	150A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	4.5mΩ
Maximum Power Dissipation Pd	278W
Typical Gate Charge Qg @ Vgs	84nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	800mV

Key Features

Designed in a TO-263 surface mount package with 3 pins.
Maximum power dissipation rated at 278 W for efficient performance.
Features a very low typical gate charge of 84 nC at Vgs.
Operates reliably within a temperature range from -55°C to 175°C.
Maximum drain-source resistance of 4.5 milliohms ensures low conduction losses.
Forward voltage drop is 800 mV, enhancing efficiency in switching applications.
Maximum gate-source voltage withstands up to 20 V.
Tested rigorously for ruggedness with 100% Rg and UIS testing.

Product Description

Vishay SUM70042E-GE3 is an N-Channel Power MOSFET designed for high-current and high-voltage applications. With a robust maximum continuous drain current of 150 A and a maximum drain-source voltage of 100 V, this device is tailored for use in industrial power management, automotive electronics, and advanced consumer electronics.

The MOSFET is housed in a TO-263 surface mount package featuring 3 pins, which facilitates easy integration into printed circuit boards. The device supports a maximum power dissipation of 278 W, enabling it to handle substantial power loads efficiently.

Notable electrical characteristics include a very low typical gate charge of 84 nC, which minimizes switching losses and improves energy efficiency for high-frequency power conversion and switching applications. The maximum drain-source resistance of 4.5 mΩ significantly reduces conduction losses, making it ideal for applications requiring high efficiency.

The device operates reliably across a wide thermal range from -55°C to a maximum junction temperature of 175°C, ensuring durability under harsh environmental conditions. It supports a maximum gate-source voltage of 20 V, providing robustness against voltage spikes in demanding circuits.

Its compact physical dimensions of 15.875 mm length, 10.414 mm width, and 4.826 mm height allow versatile design integration within space-constrained environments. TO-263 surface mount package with 3 pins. Maximum continuous drain current of 150 A.

Maximum drain-source voltage of 100 V. Low gate charge of 84 nC improves switching efficiency. Power dissipation of 278 W suitable for high power load. Wide operating temperature range from -55°C to 175°C. Extremely low drain-source resistance of 4.5 mΩ reduces conduction losses.

Tested for ruggedness with full Rg and UIS tests.

This MOSFET is well-suited for industrial power electronics, automotive control systems, and power management modules in commercial and laboratory equipment. Designers benefit from its durability, efficiency, and compact size.

Discover more electronic components and power semiconductors for your industrial and laboratory needs in the EnvMart catalog.