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onsemi N-Channel MOSFET Power Trench Technology 175 A Maximum Continuous Drain Current 150 V Maximum Drain NTMTS4D3N15MC
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 8.5mm |
| Length | 8.1mm |
| Model | NTMTS4D3N15MC |
| Width | 1.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 175A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 293W |
| Typical Gate Charge Qg @ Vgs | 79nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET supports a maximum continuous drain current of 175 A.
- It has a maximum drain source voltage rating of 150 V for reliable operation.
- The device is housed in an 8-pin DFN package suitable for surface mount.
- Maximum power dissipation is rated at 293 W allowing for high power applications.
- Operating temperature ranges from -55°C to a maximum of 175°C ensuring robustness in harsh environments.
- Maximum drain-source resistance (Rds) is 5 milliohms for low conduction losses.
- The gate source voltage maximum rating is 20 V, optimizing switching behavior.
- The forward voltage is typically 1.2 V, contributing to efficiency.
Product Description
onsemi NTMTS4D3N15MC is an N-Channel MOSFET built using advanced power trench process technology which incorporates shielded gate technology to minimize on-state resistance while maintaining excellent switching performance.
This high-performance MOSFET supports a maximum continuous drain current of 175 A and a maximum drain-source voltage rating of 150 V, making it suitable for demanding power electronics applications.
Packaged in a compact 8-pin DFN surface mount package, it offers a maximum power dissipation of 293 W, enabling it to handle high power loads efficiently. The device operates reliably across a broad temperature range from -55°C to 175°C, making it ideal for industrial, automotive, and power management use cases.
The MOSFET features a low maximum drain-source resistance of 5 milliohms which helps minimize conduction losses. It also possesses a maximum gate-source voltage of 20 V and a typical forward voltage of 1.2 V to ensure efficient switching.
Typical gate charge of 79 nC at gate-source voltage facilitates fast switching rates, reducing switching spikes and improving device performance in thermal-challenged applications.
Its compact dimensions (8.1 mm length × 8.5 mm height × 1.2 mm width) allow designers to optimize PCB space and integrate the device easily into compact layouts. This MOSFET minimizes conduction losses for improved energy efficiency.
Supports high peak current and reduces parasitic inductance for robust performance. Offers a wider design margin for thermally challenging applications. Reduces switching spikes improving overall system reliability. Suitable for industrial, power management, automotive electronics, and consumer electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 175 A.
This MOSFET has a maximum drain-source voltage rating of 150 V.
It supports a maximum power dissipation of 293 W, allowing it to handle high power applications efficiently.
The operating temperature range for this MOSFET is from -55°C to a maximum of 175°C.
The maximum drain-source resistance (Rds) is 5 milliohms, which helps minimize conduction losses.
The typical gate charge is 79 nC at the gate-source voltage.
It is housed in an 8-pin DFN surface mount package.
The forward voltage is typically 1.2 V, contributing to its efficiency.
This model has dimensions of 8.1 mm in length, 8.5 mm in height, and 1.2 mm in width.
The maximum gate-source voltage rating is 20 V, optimizing its switching behavior.
It is suitable for industrial, automotive, power management, and consumer electronics applications.
This model features an N-channel configuration.
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