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Vishay P-Channel MOSFET, 2.3 A, 20 V, Enhancement Mode, 3-Pin SOT-23 Package SI2301CDS-T1-GE3

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Vishay P-Channel MOSFET, 2.3 A, 20 V, Enhancement Mode, 3-Pin SOT-23 Package SI2301CDS-T1-GE3

Name: Vishay P-Channel MOSFET, 2.3 A, 20 V, Enhancement Mode, 3-Pin SOT-23 Package SI2301CDS-T1-GE3
Brand: Vishay
SKU: 292163
Price: 0.19 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	1.02mm
Length	3.04mm
Model	SI2301CDS-T1-GE3
Width	1.4mm
Mount Type	Surface
Series	Si2301CDS
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	2.3A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	112mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	860mW
Typical Gate Charge Qg @ Vgs	5.5nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	-1.2V

Key Features

Type P-channel MOSFET suitable for switch and amplifier applications.
Enhancement mode channel designed for reliable operation.
Compact surface mount SOT-23 package with 3 pins.
Maximum drain-source resistance of 112 milliohms ensures efficient conduction.
Operating temperature range from -55°C to 150°C allows for robust performance.
Typical gate charge at Vgs is 5.5 nanocoulombs, ensuring swift switching.
Low forward voltage of -1.2 V enables low power loss.
Maximum power dissipation of 860 milliwatts supports moderate power applications.

Product Description

Vishay SI2301CDS-T1-GE3 is a type P-channel MOSFET transistor designed for electronic switching and amplification applications. Operating at a maximum continuous drain current of 2.3 amps and a maximum drain-source voltage of 20 volts, this device is housed in a compact 3-pin SOT-23 surface-mount package, suitable for modern, space-constrained electronic circuits.

The enhancement-mode channel improves switching efficiency, minimizing conduction losses with a maximum drain-source resistance of 112 milliohms. This MOSFET supports operating temperatures from -55°C to 150°C, making it reliable for industrial, automotive, and consumer electronics environments.

The device provides typical gate charge of 5.5 nanocoulombs at a gate-source voltage, supporting fast switching performance. Its gate-source voltage tolerance ranges between -8 volts and +8 volts, ensuring durable operation and protection against voltage spikes.

A low forward voltage of -1.2 volts reduces power dissipation, while the maximum power rating of 860 milliwatts allows for efficient thermal management in compact circuits. Its physical dimensions of roughly 3.04 mm long, 1.4 mm wide, and 1.02 mm high enable integration in densely packed electronic assemblies.

This MOSFET is well-suited for industrial controls, automotive electronics, power supplies, signal processing, and other semiconductor applications requiring efficient, reliable electronic switches. The product is manufactured in China and supplied as a new component ready for surface mount assembly.

Type P-channel MOSFET for switching and amplification. Compact 3-pin SOT-23 package for surface mounting. Maximum continuous drain current: 2.3 A. Voltage rating up to 20 V drain-source. Low Rds(on) of 112 mΩ for efficient conduction.

Operating temperature range: -55°C to 150°C. Typical gate charge 5.5 nC for fast switching. Gate-source voltage limits: -8 V to +8 V. Maximum power dissipation 860 mW. Dimensions: 3.04 mm x 1.4 mm x 1.02 mm. Discover more semiconductor components like MOSFETs at EnvMart, designed for various industrial and electronic engineering needs.