$1.12
$1.09
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
DiodesZetex N-Channel Enhancement MOSFET 16.1 A, 60 V, 8-Pin VDFN DMT64M8LCG-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 3.3mm |
| Length | 3.3mm |
| Model | DMT64M8LCG-7 |
| Width | 800μm |
| Mount Type | Surface |
| Series | DMT |
| Maximum Operating Temperature | 150°C |
| Package Type | VDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16.1A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.16W |
| Typical Gate Charge Qg @ Vgs | 47.5nC |
| Maximum Gate Source Voltage Vgs | 10V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for low RDS(ON) to minimize on-state losses.
- Features fast switching speed suitable for power management applications.
- ESD protected gate ensures device reliability.
- Typical gate charge of 47.5 nC improves switching efficiency.
- Operates over a wide temperature range down to -55°C and up to 150°C.
- Compact VDFN package with dimensions 3.3 mm x 3.3 mm and 800 μm width.
- Maximum power dissipation of 2.16 W supports robust performance.
Product Description
DiodesZetex DMT64M8LCG-7 is a high-performance N-channel enhancement mode MOSFET designed for efficient power switching and battery management applications. It supports a continuous drain current of 16.1 A and withstands drain-source voltages up to 60 V, making it suitable for demanding industrial and electronic uses.
This MOSFET features low on-state resistance (RDS) of 4 mΩ, enabling low conduction losses and high conversion efficiency in power circuits. The device's fast switching capability and low gate charge of 47.5 nC optimize energy efficiency and reduce switching losses, essential for notebook battery management and load switching tasks in industrial and electronic equipment.
The compact 8-pin VDFN surface-mount package measures 3.3 mm in length and height and 800 μm in width, allowing easy integration into space-constrained designs. It operates reliably across a wide temperature range from -55°C to 150°C, suitable for harsh industrial environments including automotive electronics and power management systems.
Additional protective features include an ESD protected gate and a maximum gate source voltage rating of 10 V, enhancing device robustness and longevity. The maximum power dissipation of 2.16 W ensures stable operation under typical load conditions.
The device does not carry automotive or other special standards approvals and is designed for surface mount technology applications. Low RDS(ON) minimizes on-state losses improving efficiency. Fast switching speed optimizes power management performance.
Wide operating temperature range from -55°C to 150°C for industrial reliability. Compact 8-pin VDFN package suitable for space-sensitive applications. ESD protected gate for durable operation. Typical gate charge of 47.5 nC reduces switching losses.
Maximum power dissipation of 2.16 W supports robust performance.
This MOSFET is ideal for use in industrial, electronic, and power management applications, including notebook batteries and other portable device power circuits. Discover more semiconductor components within EnvMart’s Electronics & Electricals portfolio for your industrial and electronic needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 16.1 A.
It can withstand a maximum drain-source voltage of 60 V.
The typical gate charge is 47.5 nC, which helps improve switching efficiency.
The VDFN package measures 3.3 mm in length, 3.3 mm in height, and 800 μm in width.
The maximum power dissipation is rated at 2.16 W.
It operates reliably over a wide temperature range from -55°C to 150°C.
This model supports surface mount technology.
The on-state resistance (RDS) is 4 mΩ, which minimizes conduction losses.
The maximum gate-source voltage rating is 10 V.
This MOSFET is suitable for power management applications, including notebook battery management and load switching in industrial electronics.
Yes, it features an ESD protected gate to enhance device reliability.
This model belongs to the DMT series of MOSFETs.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
Recently Viewed Products
$0.09
$0.08
-3%
New
$0.12
$0.11
-3%
New
$1.12
$1.09
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent