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onsemi N-Channel MOSFET 30 V, 170 A, Enhancement Mode, 5-Pin DFN Package NTMFS1D7N03CGT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 6.3mm |
| Length | 5.3mm |
| Model | NTMFS1D7N03CGT1G |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | NTMFS1D7N |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | Pb-Free, RoHS |
| Pin Count | 5 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 170A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 1.74mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 87W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports continuous drain current of 170 amperes for high performance.
- Designed with an enhancement-mode N-channel for efficient switching.
- Maximum drain-source voltage rating of 30 volts.
- Low on-resistance of 1.74 milliohms minimizes power loss.
- Surface mount DFN package with 5 pins for compact PCB design.
- Maximum power dissipation of 87 watts suitable for demanding applications.
- Wide operating temperature range from -55°C to 175°C ensures reliability.
- Typical gate charge of 48 nanocoulombs for fast switching speed.
Product Description
onsemi NTMFS1D7N03CGT1G is a high-performance N-Channel MOSFET designed for power applications requiring efficient switching and low conduction losses. This device supports a maximum continuous drain current of 170 amperes and a maximum drain-source voltage of 30 volts in a compact 5-pin DFN surface mount package.
The enhancement mode channel ensures that the MOSFET operates with minimal power consumption during switching, while the low drain-source resistance of 1.74 milliohms reduces heat generation and improves system efficiency. The device can dissipate up to 87 watts of power, making it suitable for demanding industrial, automotive, and consumer electronics use cases.
Operating temperature ranges from as low as -55°C to as high as 175°C ensure reliable operation across harsh environments. The gate charge is typically 48 nanocoulombs, supporting fast switching speeds required in power management and conversion circuits.
Supports continuous drain current of 170 amperes for high performance. Enhancement-mode N-channel architecture for efficient switching. Maximum drain-source voltage rating of 30 volts for robust operation. Low on-resistance of 1.74 milliohms minimizes conduction losses.
Compact 5-pin DFN surface mount package for space-saving PCB layouts. Power dissipation capacity of 87 W for demanding industrial circuits. Wide temperature tolerance between -55°C and 175°C. Typical gate charge of 48 nC for faster switching applications.
Environmentally compliant with Pb-Free and RoHS certifications. Dimensions: 1.1 mm width, 6.3 mm height, 5.3 mm length.
This MOSFET is suited for use in industrial power management, automotive electronics, consumer electronics, and various high current switching applications. Its surface mount DFN package facilitates compact board design while delivering superior electrical performance.
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Frequently Asked Questions
The maximum continuous drain current for the NTMFS1D7N03CGT1G is 170 amperes.
This model has a maximum drain-source voltage rating of 30 volts.
The on-resistance is 1.74 milliohms, which helps minimize conduction losses.
It can dissipate up to 87 watts, making it suitable for demanding applications.
The dimensions of the DFN package are 1.1 mm in width, 6.3 mm in height, and 5.3 mm in length.
The typical gate charge is 48 nanocoulombs, which supports fast switching speeds.
The operating temperature range is from -55°C to 175°C, ensuring reliability in various environments.
It uses a surface mount DFN package, which is designed for compact PCB layouts.
It is compliant with Pb-Free and RoHS standards.
The maximum gate-source voltage for this MOSFET is 20 volts.
This model is suited for industrial power management, automotive electronics, and consumer electronics applications.
The channel type is N-channel, which is designed for enhancement mode operation.
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