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Microchip N-Channel MOSFET, TO-92 Package, 300 mA Current, 60 V Voltage, Enhancement Mode, 3-Pin TN2106N3-G
Specifications
| Country of Origin | Taiwan |
|---|---|
| Brand | Microchip |
| Height | 5.33mm |
| Length | 5.08mm |
| Model | TN2106N3-G |
| Width | 4.06mm |
| Mount Type | Through Hole |
| Series | TN2106 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 300mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 740mW |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.8V |
Key Features
- Enhancement mode MOSFET suitable for switching and amplifying applications.
- Low threshold voltage with high input impedance for efficient operation.
- Maximum power dissipation of 740 mW ensures reliable thermal stability.
- Compact 3-pin TO-92 through-hole package for easy PCB mounting.
- Wide operating temperature range from -55°C to 150°C for varied environments.
- Integral source-drain diode to prevent reverse currents.
- Fast switching speeds with low input capacitance for dynamic circuits.
- Manufactured using silicon-gate vertical DMOS technology offering thermal reliability.
Product Description
Microchip TN2106N3-G is a high-performance N-Channel MOSFET designed using vertical DMOS technology and silicon-gate manufacturing process. Featuring enhancement mode operation, this transistor offers a low threshold voltage ensuring normally-off behavior ideal for various switching and amplification needs in industrial, electronic, and power management contexts.
This device supports a continuous drain current of 300 mA and withstands a maximum drain-source voltage of 60 V. Encased in a compact TO-92 3-pin through-hole package, it allows for straightforward PCB assembly and integration into diverse electronic systems.
The MOSFET provides excellent thermal stability, with a power dissipation capacity of 740 mW and an operating temperature range from -55°C to 150°C, making it suitable for harsh environmental conditions commonly found in industrial and commercial electronic equipment.
Its low input capacitance and fast switching speeds facilitate efficient performance in dynamic circuits, reducing power losses and improving signal integrity. The integral source-drain diode protects the device against reverse voltage conditions, enhancing reliability.
Typical applications include power management in consumer electronics, signal switching in control systems, industrial automation, and other semiconductor functions requiring durable and efficient transistor components.
Enhancement mode N-Channel MOSFET technology. 300 mA maximum continuous drain current and 60 V maximum drain-source voltage. TO-92 package for through-hole mounting and easy installation. Thermally stable with a maximum power dissipation of 740 mW.
Wide operating temperature range of -55°C to 150°C. Low gate-source voltage threshold and integral source-drain diode for protection. Fast switching capability with low input capacitance. Manufactured in Taiwan, Province Of China.
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Frequently Asked Questions
The maximum continuous drain current for this model is 300 mA.
It can withstand a maximum drain-source voltage of 60 V.
This model has a maximum power dissipation capacity of 740 mW.
The operating temperature range is from -55°C to 150°C.
It comes in a compact TO-92 package suitable for through-hole mounting.
The maximum gate-source voltage for this MOSFET is 20 V.
This model has a pin count of 3.
It features an enhancement mode N-channel.
The forward voltage for this model is 1.8 V.
The dimensions are 5.08 mm in length, 4.06 mm in width, and 5.33 mm in height.
Typical applications include power management in consumer electronics and signal switching in control systems.
It is manufactured in Taiwan, Province Of China.
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