DiodesZetex P-Channel MOSFET 230 mA 45 V Enhancement Through Hole 3-Pin E-Line BS250P

The DiodesZetex BS250P is a P-Channel MOSFET transistor designed for use in electronic and power management applications. This 3-pin through hole device features enhancement mode operation and is packaged in a compact E-Line form factor, enabling easy integration into printed circuit boards requiring reliable switching components.

With a maximum continuous drain current of 230 mA and a drain-source voltage maximum rating of 45 V, the BS250P is suited for moderate power applications where efficient switching and low conduction resistance are critical. The maximum drain-source resistance of 14 ohms helps reduce power losses during operation.

Designed to operate in demanding temperature environments, it supports a wide range from -55°C minimum up to 150°C maximum operating temperature, making it ideal for automotive and industrial applications. Compliance with the automotive AEC-Q101 standard further guarantees reliability and quality in harsh conditions.

The device's maximum power dissipation is rated at 700 mW, allowing it to handle significant thermal loads safely. Its gate-source voltage tolerance between -20 V and +20 V provides flexibility for various driving signals and protects the MOSFET from damage.

The BS250P's physical dimensions are compact, with a length of 4.77 mm, height of 4.01 mm, and width of 2.41 mm, optimizing PCB space utilization for dense assemblies. The through hole mounting style facilitates easy assembly and maintenance.

The device operates in enhancement mode ensuring reliable switching performance. Constructed with E-Line packaging, supporting through hole mounting. It features a maximum drain-source resistance of 14 ohms, optimizing conduction efficiency.

Designed for high temperature operations up to 150°C and minimum operating temperature down to -55°C. Maximum continuous power dissipation is rated at 700 mW for stable operation. Maximum gate-source voltage tolerances are -20 to +20 volts for safe gate drive conditions.

Compact dimensions of 4.77 mm length, 4.01 mm height, and 2.41 mm width facilitate dense PCB layouts. Complies with automotive AEC-Q101 standard ensuring suitability for automotive electronic applications.

This MOSFET is ideal for use in industrial electronics, automotive systems, power management circuits, and semiconductor discrete component designs. It supports enhanced switching control and energy efficiency in compact, high-integrity layouts.

Explore more MOSFETs and discrete semiconductors in our electronics category for comprehensive solutions. DiodesZetex continues to provide quality semiconductor devices for electronic manufacturing and prototyping needs.