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Vishay P-Channel TrenchFET Power MOSFET 4.7 A, 60 V Enhancement, 8-Pin SOIC SI9407BDY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI9407BDY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | Si9407BDY |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.12Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.8V |
Key Features
- Maximum continuous drain current of 4.7 A ensures reliable power handling.
- 60 V maximum drain-source voltage supports medium voltage applications.
- SOIC package with 8 pins designed for surface mounting.
- Enhancement mode channel operation for efficient switching.
- Low drain-source resistance of 0.12 ohms reduces power loss.
- Forward voltage of -0.8 V enables minimized conduction losses.
- Power dissipation rating up to 5 W for high-performance usage.
- Operating temperature range from -55°C to 150°C for durability.
Product Description
Vishay SI9407BDY-T1-GE3 is a P-Channel TrenchFET Power MOSFET designed for reliable power electronics applications. It features a maximum continuous drain current of 4.7 A and a drain-source voltage rating of 60 V, ideal for medium voltage systems requiring efficient switching capabilities.
Packaged in an 8-pin SOIC surface-mount type, this MOSFET exhibits an enhancement mode channel for optimal control. It offers a low drain-source resistance of 0.12 ohms that minimizes conduction losses and supports up to 5 W of power dissipation, making it suitable for industrial, automotive, and consumer electronics power management.
The MOSFET's gate-source voltage range of -20 V to +20 V provides flexible operation, while its forward voltage drop of -0.8 V boosts efficiency. It withstands wide operating temperatures, from -55°C to 150°C, ensuring durability under harsh conditions.
Compact physical dimensions (5 mm × 4 mm × 1.55 mm) enable integration in space-constrained PCB designs. The product complies with IEC 61249-2-21 and RoHS 2002/95/EC standards and is manufactured in China.
Maximum continuous drain current of 4.7 A ensures reliable power handling. 60 V maximum drain-source voltage supports medium voltage applications. SOIC package with 8 pins designed for surface mounting. Enhancement mode channel operation for efficient switching.
Low drain-source resistance of 0.12 ohms reduces power loss. Voltage gate-source range of -20 V to +20 V for flexible control. Forward voltage of -0.8 V enables minimized conduction losses. Power dissipation rating up to 5 W for high-performance usage.
Operating temperature range from -55°C to 150°C for durability. Compact dimensions: length 5 mm, width 4 mm, height 1.55 mm.
This Vishay Power MOSFET is ideal for industrial electronics, power management circuits, and automotive electrical systems. It supports efficient switching control in discrete semiconductor applications. Explore more Vishay semiconductor products at EnvMart for your design and manufacturing requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.7 A, ensuring reliable power handling in various applications.
This MOSFET has a maximum drain-source voltage rating of 60 V, making it suitable for medium voltage applications.
It comes in an 8-pin SOIC package designed for surface mounting, which is compact for PCB integration.
The operating temperature range for this model is from -55°C to 150°C, allowing it to function in harsh conditions.
The drain-source resistance is 0.12 ohms, which helps to minimize power loss during operation.
The forward voltage drop for this model is -0.8 V, which contributes to minimized conduction losses.
This power MOSFET has a maximum power dissipation rating of up to 5 W, suitable for high-performance applications.
The gate-source voltage range for the SI9407BDY-T1-GE3 is -20 V to +20 V, providing flexibility in operation.
The typical gate charge at Vgs is 8 nC, which is relevant for switching performance.
It features an enhancement mode channel, which is designed for efficient switching capabilities.
This product is manufactured in China, as indicated by its country of origin.
It is suitable for use in industrial electronics, power management circuits, and automotive electrical systems.
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