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DiodesZetex Silicon Junction Switching Diode 1 A Forward Current, 200 V Maximum Peak Reverse Voltage, SMB MURS120-13-F

Category Discrete Semiconductor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 2.3mm
Length 4.57mm
Model MURS120-13-F
Width 3.94mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type SMB
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 40A
Maximum Forward Voltage Vf 875mV
Peak Reverse Recovery Time trr 25ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • This diode features a single silicon junction configuration suitable for switching applications.
  • It has a maximum forward voltage of 875 mV ensuring efficient conduction.
  • The maximum peak reverse recovery time is 25 ns, enabling fast switching performance.
  • Operating temperature range extends from -55°C up to 175°C for reliable operation under harsh conditions.
  • The SMB surface mount package offers compactness with dimensions of 4.57 mm length, 3.94 mm width, and 2.3 mm height.
  • Its peak non-repetitive forward surge current capability is 40 A.
  • This diode is designed without automotive standards and lacks explicit certifications.
  • Made in China, the product supports industrial electronic applications requiring reliable diode switching.

Product Description

DiodesZetex MURS120-13-F is a silicon junction switching diode designed for electronic, industrial, and power applications. It supports a maximum forward current of 1 A and can withstand a peak reverse repetitive voltage of 200 V. Housed in a SMB surface mount package, this diode's compact size (4.57 mm length, 3.94 mm width, 2.3 mm height) allows integration in space-constrained printed circuit boards.

The diode features a low maximum forward voltage of 875 mV, contributing to efficient current conduction and minimal power loss. It has a fast peak reverse recovery time (trr) of 25 ns, making it suitable for switching applications where speed is critical. Its peak non-repetitive forward surge current rating of 40 A ensures transient tolerance during power surges.

Operating reliably from -55°C to 175°C, the MURS120-13-F diode maintains performance in demanding environmental conditions encountered in industrial and electronic systems. Although it does not carry specific automotive certifications, it aligns with standard electronic component requirements.

This diode is commonly used in switching power supplies, electronic converters, and other semiconductor circuits requiring robust switching diodes with moderate current and voltage ratings. It is an ideal choice for industrial electronic equipment, laboratory power electronics, and manufacturing control systems.

This diode features a single silicon junction configuration suitable for switching applications. Maximum forward current is rated at 1 A. Peak reverse voltage capacity is 200 V. Surface mount SMB package provides a compact footprint.

Peak reverse recovery time is 25 ns enabling high switching speed. Wide operating temperature range of -55°C to 175°C. Peak surge current up to 40 A for transient tolerance. Manufactured in China. Explore more diode and semiconductor products in the Electronics & Electricals section at EnvMart for your power and switching component needs.

Explore more products in our Discrete Semiconductor category.

DiodesZetex Silicon Junction Switching Diode 1 A Forward Current, 200 V Maximum Peak Reverse Voltage, SMB MURS120-13-F
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Frequently Asked Questions

The maximum forward current rating of the MURS120-13-F diode is 1 A.

This diode can withstand a peak reverse repetitive voltage of 200 V.

The SMB package dimensions are 4.57 mm in length, 3.94 mm in width, and 2.3 mm in height.

The peak non-repetitive forward surge current capability of this diode is 40 A.

The maximum forward voltage drop is 875 mV, ensuring efficient conduction.

The peak reverse recovery time is 25 ns, enabling fast switching performance.

The operating temperature range extends from -55°C to 175°C.

This diode has a pin count of 2.

The MURS120-13-F features a single silicon junction configuration suitable for switching applications.

This diode is designed for surface mounting.

This diode is commonly used in switching power supplies, electronic converters, and other semiconductor circuits requiring robust switching capabilities.

The MURS120-13-F diode is manufactured in China.

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