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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF830APBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF830A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 1.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 74W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
| N-Channel MOSFET Transistor, 4.5 A, 3-Pin TO-220AB NXP IRF830Brand | NXP |
| N-channel MOSFET,IRF830A 5A 500VBrand | Vishay |
Vishay IRF830APBF is a high-voltage N-Channel Power MOSFET designed for switching and power conversion applications requiring reliable performance in industrial and commercial electronics. This enhancement mode transistor supports continuous drain current up to 5 A and is rated for 500 V drain-source voltage, making it suitable for various high voltage supply switching tasks.
The device is housed in a through-hole TO-220AB package allowing straightforward mounting and excellent thermal management, supporting a maximum power dissipation of 74 W. Its low maximum drain-source resistance of 1.4 ohms reduces conduction losses, amplifying efficiency under load.
With a typical gate charge of 24 nC and a gate-source voltage tolerance of ±30 V, gate drive circuitry can be optimized for fast switching without exceeding its limits. Operating temperature ranges from -55°C to 150°C ensure dependable function in wide ambient conditions.
Vishay IRF830APBF is ideal for powering inverter supply switching, motor drive stages in industrial setups, and discrete power supplies in laboratory instrumentation. It handles both resistive and inductive load switching reliably but is not classified for automotive-grade applications, so vehicle-level design requires automotive-specific alternatives.
Thermal management considerations are critical. Employing appropriate heat sinks and correct TO-220AB mounting orientation will maintain junction temperature within safe limits, preventing device degradation.
The device features a 1.4 ohm maximum drain-source resistance for efficient conduction. Enhancement mode channel type ensures robust switching performance. Packaged in a 3-pin TO-220AB through-hole mounting package for easy heat dissipation.
Maximum power dissipation rating of 74 W for demanding thermal requirements. Wide operating temperature range from -55°C to 150°C suitable for industrial environments. Typical gate charge of 24 nC facilitates predictable and efficient switching.
Gate-source voltage tolerance up to ±30 V allows strong gate drive margins. Not automotive grade; intended for industrial, commercial, and laboratory electronics. Explore Vishay products and Power MOSFETs at EnvMart for industrial and laboratory power electronics needs.
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