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Vishay E Series N-Channel Enhancement MOSFET, 6 A, 800 V, 3-Pin TO-220 SIHA15N80AE-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.3mm |
| Length | 28.1mm |
| Model | SIHA15N80AE-GE3 |
| Width | 9.7mm |
| Mount Type | Through Hole |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 304mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 33W |
| Typical Gate Charge Qg @ Vgs | 35nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Designed for high efficiency with low figure-of-merit (Ron x Qg) for reduced conduction and switching losses.
- Thin-lead TO-220 FULLPAK package supports through-hole mounting.
- Maximum power dissipation rating of 33 W enables robust thermal performance.
- Enhancement mode channel with a maximum gate-source voltage of 30 V.
- Operating temperature from -55°C to 150°C ensures reliability in extreme conditions.
- Forward voltage of 1.2 V and typical gate charge of 35 nC at Vgs.
- Not suitable for automotive standard applications.
Product Description
Vishay SIHA15N80AE-GE3 N-Channel Enhancement MOSFET provides reliable performance for power electronic applications requiring up to 6 A continuous drain current and 800 V maximum drain-source voltage. This transistor features a TO-220 FULLPAK 3-pin package facilitating through-hole mounting and efficient heat dissipation.
The device is engineered with a low figure-of-merit (Ron x Qg) to optimize switching efficiency by reducing conduction and switching losses. It supports a maximum power dissipation of 33 W and delivers stable operation from -55°C up to 150°C, making it suitable for demanding industrial and power management tasks.
This enhancement mode MOSFET offers a maximum gate-source voltage of 30 V and a typical gate charge of 35 nC, enabling precise control in switching circuits. Forward voltage is rated at 1.2 V, balancing efficient conduction and switching speed.
With compact package dimensions of 28.1 mm length, 9.7 mm width, and 4.3 mm height, the component integrates well in various PCB layouts requiring through-hole mounting options. It does not meet automotive standards and is ideal for general industrial, laboratory, and electronic manufacturing applications.
Low figure-of-merit for energy-efficient switching. Robust power dissipation capabilities. Wide operating temperature range. Compact TO-220 FULLPAK 3-pin package. Suitable for industrial and electronics assembly use cases.
Enhancement mode for controlled switching applications. Designed for use in power supplies, converters, and motor control circuits.
Explore the Electronics & Electricals category on EnvMart for more discrete semiconductor components and Power MOSFETs to enhance your electronic designs and manufacturing processes.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 A.
This MOSFET has a maximum drain-source voltage rating of 800 V.
It supports a maximum power dissipation of 33 W, enabling robust thermal performance.
The dimensions are 28.1 mm in length, 9.7 mm in width, and 4.3 mm in height.
The typical gate charge at Vgs is 35 nC.
The maximum gate-source voltage for this MOSFET is 30 V.
It operates within a temperature range of -55°C to 150°C.
This model supports through-hole mounting due to its TO-220 FULLPAK package.
The forward voltage rating is 1.2 V.
This device features an N-channel enhancement mode.
It is suitable for industrial, laboratory, and electronic manufacturing applications, particularly in power supplies and motor control circuits.
The maximum drain-source resistance for this model is 304 mΩ.
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