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DiodesZetex N-Channel Enhancement MOSFET 100 V 20.1 kA 8-Pin PowerDI5060 Surface Mount DMTH10H4M5LPS-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 900μm
Length 6.15mm
Model DMTH10H4M5LPS-13
Width 5.15mm
Mount Type Surface
Series DMTH10
Maximum Operating Temperature 150°C
Package Type PowerDI5060
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 20.1kA
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 6.2mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.7W
Typical Gate Charge Qg @ Vgs 80nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • The MOSFET exhibits low on-resistance for efficient conduction.
  • It supports fast switching speeds for improved performance.
  • Designed for surface mount applications with an 8-pin configuration.
  • Capable of dissipating up to 2.7 W of power safely.
  • Operates reliably across a wide temperature range from -55°C to 150°C.
  • Supports a maximum gate source voltage of 20 V ensuring stable operation.
  • Compact dimensions with length of 6.15 mm, width of 5.15 mm, and height of 900 μm.
  • Typical gate charge of 80 nC at Vgs, enabling responsive control.

Product Description

DiodesZetex DMTH10H4M5LPS-13 is a high-performance N-Channel enhancement mode MOSFET rated for 100 V maximum drain-source voltage and an exceptional 20.1 kA maximum continuous drain current, packaged in an 8-pin PowerDI5060 surface mount suitable for compact power electronic designs.

This device features low on-state resistance of 6.2 mΩ which minimizes conduction losses during operation, making it ideal for applications where efficiency and thermal performance are critical. Fast switching characteristics support efficient power management in systems like notebook battery power management and load switching circuits.

With a maximum power dissipation of 2.7 W and the ability to operate in a temperature range from -55°C to 150°C, this MOSFET is designed to provide reliable performance under demanding industrial and electronic conditions. The gate threshold is controlled with a maximum gate-source voltage of 20 V and a typical gate charge of 80 nC, ensuring precise switching control.

The package dimensions (6.15 mm length, 5.15 mm width, and 900 μm height) and surface mount configuration enable easy integration into tight PCB layouts common in electronics manufacturing.

Low on-resistance reduces power loss and heat generation. Fast switching speed improves operational efficiency. Surface mount 8-pin PowerDI5060 package for compact circuit designs. Thermal power dissipation rated at 2.7 W for stable heat management.

Wide operating temperature range from -55°C to 150°C ensures versatile application. Max gate-source voltage of 20 V supports stable switching. Compact physical dimensions support dense circuit integration. Typical gate charge of 80 nC for responsive gate control.

Forward voltage of 1.2 V contributes to efficient conduction.

This MOSFET is commonly used in electronic, industrial, and power management applications including notebook battery systems, load switch circuits, and other semiconductor-based designs where compact size and high electrical performance are required.

Manufactured in China, this new condition component adheres to industry standards, delivering reliable and consistent operation for demanding power management solutions. Explore more DiodesZetex MOSFETs and semiconductor components on EnvMart for your industrial, laboratory, and manufacturing applications.

DiodesZetex N-Channel Enhancement MOSFET 100 V 20.1 kA 8-Pin PowerDI5060 Surface Mount DMTH10H4M5LPS-13
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Frequently Asked Questions

The maximum continuous drain current of this model is 20.1 kA.

It has a maximum drain-source voltage rating of 100 V.

The package dimensions are 6.15 mm in length, 5.15 mm in width, and 900 μm in height.

The maximum power dissipation is rated at 2.7 W.

The typical gate charge at Vgs is 80 nC.

It operates reliably across a wide temperature range from -55°C to 150°C.

The maximum gate-source voltage supported is 20 V.

This model is designed for surface mount applications.

The on-resistance is 6.2 mΩ, which helps minimize conduction losses.

This MOSFET is commonly used in electronic, industrial, and power management applications, including notebook battery systems and load switch circuits.

It is an N-channel enhancement mode MOSFET.

This component is manufactured in China.

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