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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 900μm |
| Length | 6.15mm |
| Model | DMTH10H4M5LPS-13 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | DMTH10 |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI5060 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20.1kA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 6.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.7W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
DiodesZetex DMTH10H4M5LPS-13 is a high-performance N-Channel enhancement mode MOSFET rated for 100 V maximum drain-source voltage and an exceptional 20.1 kA maximum continuous drain current, packaged in an 8-pin PowerDI5060 surface mount suitable for compact power electronic designs.
This device features low on-state resistance of 6.2 mΩ which minimizes conduction losses during operation, making it ideal for applications where efficiency and thermal performance are critical. Fast switching characteristics support efficient power management in systems like notebook battery power management and load switching circuits.
With a maximum power dissipation of 2.7 W and the ability to operate in a temperature range from -55°C to 150°C, this MOSFET is designed to provide reliable performance under demanding industrial and electronic conditions. The gate threshold is controlled with a maximum gate-source voltage of 20 V and a typical gate charge of 80 nC, ensuring precise switching control.
The package dimensions (6.15 mm length, 5.15 mm width, and 900 μm height) and surface mount configuration enable easy integration into tight PCB layouts common in electronics manufacturing.
Low on-resistance reduces power loss and heat generation. Fast switching speed improves operational efficiency. Surface mount 8-pin PowerDI5060 package for compact circuit designs. Thermal power dissipation rated at 2.7 W for stable heat management.
Wide operating temperature range from -55°C to 150°C ensures versatile application. Max gate-source voltage of 20 V supports stable switching. Compact physical dimensions support dense circuit integration. Typical gate charge of 80 nC for responsive gate control.
Forward voltage of 1.2 V contributes to efficient conduction.
This MOSFET is commonly used in electronic, industrial, and power management applications including notebook battery systems, load switch circuits, and other semiconductor-based designs where compact size and high electrical performance are required.
Manufactured in China, this new condition component adheres to industry standards, delivering reliable and consistent operation for demanding power management solutions. Explore more DiodesZetex MOSFETs and semiconductor components on EnvMart for your industrial, laboratory, and manufacturing applications.
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