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DiodesZetex P-Channel MOSFET 130 mA 50 V Enhancement Surface Mount 3-Pin SOT-23 BSS84

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BSS84
Width 1.4mm
Mount Type Surface
Series BSS84
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q104, AEC-Q200
Channel Type Type P
Maximum Continuous Drain Current Id 130mA
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 10Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 300mW
Typical Gate Charge Qg @ Vgs 0.59nC
Maximum Gate Source Voltage Vgs -20, +20V

Key Features

  • This MOSFET features an enhancement mode channel type.
  • It supports a maximum power dissipation of 300 mW.
  • Maximum drain-source resistance is 10 ohms ensuring efficient switching.
  • Designed for surface-mount applications with 3 pins for easy PCB integration.
  • Operates in a temperature range of -55°C to 150°C for durability.
  • Typical gate charge is 0.59 nC for fast switching performance.
  • Maximum gate-source voltage rating is -20 V to +20 V.

Product Description

DiodesZetex BSS84 is a high-quality P-Channel MOSFET designed for electronic circuits requiring efficient switching with a continuous drain current of 130 mA and maximum drain-source voltage of 50 V.

This enhancement mode MOSFET comes in a surface-mount 3-pin SOT-23 package suitable for modern compact PCB designs. It supports a maximum power dissipation of 300 mW, making it reliable for low-power applications.

The device features a maximum drain-source resistance of 10 ohms, ensuring minimal losses during operation. Typical gate charge is 0.59 nC at gate-source voltage conditions, enabling fast switching speeds.

With an operating temperature range from -55°C to 150°C, the BSS84 is suitable for demanding industrial, automotive, and consumer electronic environments. The maximum gate-source voltage rating of -20 V to +20 V adds to its robustness.

Its compact physical dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height further facilitate integration into miniature electronic devices. This MOSFET features an enhancement mode channel type. Supports continuous drain current of 130 mA with low drain-source resistance.

Compact 3-pin SOT-23 package for surface mounting. High maximum power dissipation rating of 300 mW. Wide operating temperature from -55°C to 150°C. Low typical gate charge for efficient switching. Robust maximum gate-source voltage rating.

Compact physical dimensions for miniature designs.

DiodesZetex BSS84 is ideal for a wide range of applications including industrial control circuits, automotive electronics, power management, and general electronic component use where compact and reliable P-Channel MOSFETs are required.

Explore more semiconductor and MOSFET products at EnvMart to fulfill your design and manufacturing needs efficiently.

DiodesZetex P-Channel MOSFET 130 mA 50 V Enhancement Surface Mount 3-Pin SOT-23 BSS84
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Frequently Asked Questions

The maximum continuous drain current for this model is 130 mA.

The maximum drain-source voltage rating for this MOSFET is 50 V.

The typical gate charge is 0.59 nC at specified gate-source voltage conditions.

It comes in a surface-mount SOT-23 package.

The operating temperature range is from -55°C to 150°C.

This MOSFET can support a maximum power dissipation of 300 mW.

The dimensions are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The maximum gate-source voltage rating is -20 V to +20 V.

The maximum drain-source resistance is 10 ohms.

It complies with automotive standards AEC-Q100, AEC-Q101, AEC-Q104, and AEC-Q200.

The BSS84 features a P-channel enhancement mode channel type.

This model has a pin count of 3.

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