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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 0.8mm |
| Length | 3.35mm |
| Model | DMP2006UFG-7 |
| Width | 3.35mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI3333 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 17.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 17mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 41W |
| Typical Gate Charge Qg @ Vgs | 140nC |
| Maximum Gate Source Voltage Vgs | -10, +10V |
| Forward Voltage Vf | -1.2V |
DiodesZetex DMP2006UFG-7 is a P-Channel enhancement mode MOSFET designed for applications requiring a maximum continuous drain current of 17.5 A and a maximum drain source voltage of 20 V. Housed in an 8-pin PowerDI3333 surface mount package, this device is engineered for efficient power management with low drain source resistance of 17 mΩ ensuring minimal conduction losses. It operates reliably within a temperature range from -55°C to 150°C, supporting industrial, automotive, and consumer electronics applications.
This MOSFET features a typical gate charge of 140 nC, enabling rapid switching in power electronic circuits. The maximum power dissipation rating of 41 W allows the device to manage moderate heat dissipation in compact layouts. With a gate source voltage rating from -10 V to +10 V, the device provides robust gate control and stability.
The DMP2006UFG-7 complies with the automotive AEC-Q101 standard, making it suitable for automotive electronics requiring high reliability. The compact dimensions of 3.35 mm length, 3.35 mm width, and 0.8 mm height make it ideal for space-constrained PCB designs.
This MOSFET is suited for use in industrial power management, automotive electronics, motor control circuits, and other applications that require efficient switching and durability. It is a critical component for PCB power distribution, switching regulators, and DC-DC converters.
This enhancement mode MOSFET features a PowerDI3333 package type. Surface mount type with 8 pins ensures compactness for PCB layouts. The device has a low maximum drain source resistance of 17 mΩ. Operating temperature ranges from -55°C to 150°C for reliability.
Maximum power dissipation is rated at 41 W for efficient heat handling. Typical gate charge is 140 nC at Vgs for fast switching performance. Gate source voltage rating of -10 V to +10 V secures stability in circuit applications.
Compliance with automotive standard AEC-Q101 makes it suitable for automotive projects. Compact size with length and width of 3.35 mm and height of 0.8 mm. Explore a wide range of reliable MOSFETs at EnvMart for your electronic design and manufacturing needs.
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