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Vishay P-Channel Power MOSFET 18 A, 50 V, TO-220AB Package IRF9Z30PBF

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Vishay P-Channel Power MOSFET 18 A, 50 V, TO-220AB Package IRF9Z30PBF

Name: Vishay P-Channel Power MOSFET 18 A, 50 V, TO-220AB Package IRF9Z30PBF
Brand: Vishay
SKU: 155041

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Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	6.48mm
Length	14.4mm
Model	IRF9Z30PBF
Width	10.52mm
Maximum Operating Temperature	150°C
Package Type	TO-220AB
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Number of Elements per Chip	1
Channel Type	Type P
Maximum Continuous Drain Current Id	18A
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	0.14Ω
Maximum Power Dissipation Pd	74W
Typical Gate Charge Qg @ Vgs	39nC
Maximum Gate Source Voltage Vgs	20V
Transistor Configuration	Single

Key Features

Equipped with a durable TO-220AB package ensuring reliable thermal management.
Offers a maximum power dissipation rating of 74 W for high-performance applications.
Operates effectively in temperature ranges from -55°C to 150°C.
Features a low drain-source resistance of 0.14 Ω for reduced conduction losses.
Supports a maximum gate-source voltage of ±20 V for enhanced control.
Typical gate charge of 39 nC enables fast switching speeds.
Single transistor configuration suitable for various power electronics.
Compliant with RoHS standards ensuring eco-friendly product composition.

Product Description

Vishay IRF9Z30PBF is a high-quality P-Channel Power MOSFET packaged in a TO-220AB form factor, capable of handling a maximum continuous drain current of 18 A and a drain-source voltage of 50 V. This device ensures excellent efficiency by optimizing switching performance and conduction losses, making it suitable for demanding power management applications.

It features a robust maximum power dissipation of 74 W and an operating temperature range from -55°C to 150°C, promoting reliable operation in harsh industrial and commercial environments. The MOSFET exhibits a low drain-source resistance (Rds(on)) of 0.14 Ω at a gate-source voltage of 10 V, contributing to superior energy efficiency.

The device supports a maximum gate-source voltage of ±20 V and has a typical gate charge of 39 nC, enabling fast switching speeds beneficial in inverter circuits and switch-mode power supplies. Its single transistor configuration provides flexibility in various electrical designs.

Manufactured with RoHS compliance, this MOSFET suits applications including battery chargers, inverters, power supplies, and switching mode power supplies (SMPS) in industrial, laboratory, and HVAC environments. The package dimensions - length 14.4 mm, width 10.52 mm, and height 6.48 mm - facilitate compatibility with typical heatsinking solutions.

This component is made in China and does not conform to automotive standards, focusing on industrial and commercial sectors. Durable TO-220AB package for reliable heat dissipation. Maximum continuous drain current of 18 A suitable for power circuits.

Low Rds(on) at 0.14 Ω reduces power losses during conduction. Wide operating temperature range from -55°C to 150°C enables usage in diverse environments. Fully avalanched rated for transient voltage protection. Fast switching capability enhanced by typical gate charge of 39 nC.

RoHS compliant ensuring environmentally safe materials. Ideal for battery chargers, inverters, and SMPS applications. Single transistor configuration for diverse electronic designs. Explore a wide range of Power MOSFETs and related electronic components in the EnvMart catalog for industrial and commercial power management solutions.