Vishay Type P-Channel MOSFET, 110 A, 60 V Enhancement, 3-Pin TO-263 SUM110P06-07L-E3

Vishay SUM110P06-07L-E3 is a high-performance P-Channel MOSFET designed for power switching and amplification in electronic circuits. Featuring a maximum continuous drain current of 110 A and a drain-source voltage rating of 60 V, this enhancement mode MOSFET is optimized for reliable operation up to 175°C.

The TO-263 package ensures excellent thermal management with low thermal resistance, making it ideal for industrial, automotive, and power management applications where heat dissipation is critical. The enhancement mode channel type provides efficient switching characteristics with a low Rds(on) of 0.0088 Ω, reducing conduction losses and improving energy efficiency.

Typical gate charge of 230 nC allows for swift switching transitions, minimizing switching losses in PWM and motor control circuits. Its operating temperature range from -55°C to 175°C enables use in harsh environments, including industrial and automotive electronics where temperature extremes are common.

This device's surface mount TO-263 package with three pins supports compact circuit designs and ease of integration on printed circuit boards. The maximum permissible gate-source voltage of ±20 V protects against voltage spikes, enhancing durability under transient conditions.

Manufactured in Taiwan, Province of China, the SUM110P06-07L-E3 is a dependable choice for discrete semiconductor needs in power electronic systems. It is well suited for use in power supplies, converters, and various automotive and industrial electronic systems requiring high current and voltage handling capabilities.

The device supports a maximum power dissipation of 375 W for heavy load conditions. Typical gate charge is 230 nC at Vgs, ensuring responsive switching performance. It operates efficiently between -55°C and 175°C, suitable for demanding industrial environments.

Low Rds(on) of 0.0088 Ω reduces conduction losses. Compact TO-263 surface mount package promotes thermal management. Maximum gate-source voltage rating of ±20 V protects against overstress. Package dimensions are 10.41 mm length, 9.65 mm width, and 4.83 mm height.

Originates from Taiwan, Province of China, ensuring quality manufacturing.

EnvMart provides this Vishay Power MOSFET for applications including industrial automation, power electronics, automotive systems, and any demanding environment that requires robust, high-current semiconductor switching solutions.