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| Country of Origin | China |
|---|---|
| Brand | Wolfspeed |
| Height | 5.21mm |
| Length | 16.13mm |
| Model | C3M0065090D |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | C3M |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 78mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 30.4nC |
| Maximum Gate Source Voltage Vgs | -8, +18V |
| Forward Voltage Vf | 4.4V |
Wolfspeed C3M0065090D is a high-performance N-channel enhancement mode MOSFET built with advanced Silicon Carbide (SiC) technology. It supports a maximum continuous drain current of 36 A and can withstand drain-source voltages up to 900 V, optimized for demanding power management applications. The 3-pin TO-247 package enables straightforward through-hole mounting in industrial, laboratory, and commercial power electronic assemblies.
Featuring low on-resistance (78 mΩ) and a maximum power dissipation of 125 W, this Wolfspeed MOSFET improves system efficiency by reducing conduction and switching losses. The device exhibits a typical gate charge of 30.4 nC, allowing high switching frequencies that lower cooling needs and overall system size. It operates reliably within a broad temperature range from -55°C to 150°C, suitable for harsh environments in manufacturing, HVAC systems, renewable energy inverters, and electric vehicle charging stations.
The MOSFET provides high-speed switching performance with robust latch-up resistance, making it suitable for parallel configuration in high current power circuits. Forward voltage is rated at 4.4 V. Its compact dimensions (Length 16.13 mm, Width 21.1 mm, Height 5.21 mm) facilitate design flexibility in dense electronics assemblies. This Wolfspeed device comes without specific automotive certifications and is manufactured in China.
Enhancement-mode N-channel SiC technology ensures superior power density and switching efficiencies. Robust maximum continuous current of 36 A supports demanding industrial applications. High voltage rating of 900 V for use in a variety of power electronics systems.
Low on-resistance minimizes energy losses and heat generation. Thermally efficient package suitable for through-hole mounting and high power dissipation. Wide operating temperature range for use in extreme environmental conditions.
High-speed switching capability reduces cooling requirements. Reliable latch-up resistant design enables easy parallel operation. Compact form factor for versatile integration. Origin: China.
This Wolfspeed Power MOSFET is ideal for power electronics applications such as industrial motor drives, power supplies, solar inverters, automotive power management, and other high-efficiency switching devices. Explore more Wolfspeed semiconductor components and power solutions in the Electronics & Electricals section at EnvMart for advanced industrial applications.
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