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Wolfspeed N-Channel Enhancement Mode MOSFET 36 A 900 V, 3-Pin TO-247 Package C3M0065090D

Category Power MOSFET Brand Wolfspeed Condition New

Specifications

Country of Origin China
Brand Wolfspeed
Height 5.21mm
Length 16.13mm
Model C3M0065090D
Width 21.1mm
Mount Type Through Hole
Series C3M
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 36A
Maximum Drain Source Voltage Vds 900V
Maximum Drain Source Resistance Rds 78mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs 30.4nC
Maximum Gate Source Voltage Vgs -8, +18V
Forward Voltage Vf 4.4V

Key Features

  • Enhancement mode N-channel Silicon Carbide technology for superior switching efficiency and power density.
  • Maximum continuous drain current rated at 36 A for high power applications.
  • Maximum drain-source voltage of 900 V enables operation in high-voltage systems.
  • Low on-resistance of 78 milliohms reduces conduction losses and improves efficiency.
  • Maximum power dissipation is 125 W, ensuring robust thermal performance.
  • Typical gate charge of 30.4 nC facilitates fast switching speeds.
  • Wide operating temperature range from -55°C to 150°C for harsh industrial environments.
  • Package type TO-247 designed for through-hole mounting in power electronics.

Product Description

Wolfspeed C3M0065090D is a high-performance N-channel enhancement mode MOSFET built with advanced Silicon Carbide (SiC) technology. It supports a maximum continuous drain current of 36 A and can withstand drain-source voltages up to 900 V, optimized for demanding power management applications. The 3-pin TO-247 package enables straightforward through-hole mounting in industrial, laboratory, and commercial power electronic assemblies.

Featuring low on-resistance (78 mΩ) and a maximum power dissipation of 125 W, this Wolfspeed MOSFET improves system efficiency by reducing conduction and switching losses. The device exhibits a typical gate charge of 30.4 nC, allowing high switching frequencies that lower cooling needs and overall system size. It operates reliably within a broad temperature range from -55°C to 150°C, suitable for harsh environments in manufacturing, HVAC systems, renewable energy inverters, and electric vehicle charging stations.

The MOSFET provides high-speed switching performance with robust latch-up resistance, making it suitable for parallel configuration in high current power circuits. Forward voltage is rated at 4.4 V. Its compact dimensions (Length 16.13 mm, Width 21.1 mm, Height 5.21 mm) facilitate design flexibility in dense electronics assemblies. This Wolfspeed device comes without specific automotive certifications and is manufactured in China.

Enhancement-mode N-channel SiC technology ensures superior power density and switching efficiencies. Robust maximum continuous current of 36 A supports demanding industrial applications. High voltage rating of 900 V for use in a variety of power electronics systems.

Low on-resistance minimizes energy losses and heat generation. Thermally efficient package suitable for through-hole mounting and high power dissipation. Wide operating temperature range for use in extreme environmental conditions.

High-speed switching capability reduces cooling requirements. Reliable latch-up resistant design enables easy parallel operation. Compact form factor for versatile integration. Origin: China.

This Wolfspeed Power MOSFET is ideal for power electronics applications such as industrial motor drives, power supplies, solar inverters, automotive power management, and other high-efficiency switching devices. Explore more Wolfspeed semiconductor components and power solutions in the Electronics & Electricals section at EnvMart for advanced industrial applications.

Wolfspeed N-Channel Enhancement Mode MOSFET 36 A 900 V, 3-Pin TO-247 Package C3M0065090D
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Frequently Asked Questions

The maximum continuous drain current for this model is rated at 36 A, making it suitable for high power applications.

This MOSFET can withstand a maximum drain-source voltage of 900 V, enabling its use in high-voltage systems.

The on-resistance of this device is 78 milliohms, which helps to reduce conduction losses and improve efficiency.

The maximum power dissipation for this model is 125 W, ensuring robust thermal performance.

The typical gate charge for this device is 30.4 nC, facilitating fast switching speeds.

This MOSFET operates reliably within a wide temperature range from -55°C to 150°C, suitable for harsh environments.

The package type for this model is TO-247, designed for through-hole mounting in power electronics.

The dimensions of this device are 16.13 mm in length, 21.1 mm in width, and 5.21 mm in height.

This model features an N-channel enhancement mode, which is optimized for high-efficiency switching applications.

This MOSFET is suitable for applications such as industrial motor drives, power supplies, solar inverters, and automotive power management.

The maximum gate-source voltage for this MOSFET is -8 V to +18 V, allowing for a range of control options.

Yes, this model has a robust latch-up resistance that enables easy parallel operation in high current power circuits.

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