Toshiba N-Channel MOSFET, 15.8 A, 600 V Enhancement Mode, 3-Pin TO-220 Package TK16A60W5,S4VX(M

The Toshiba TK16A60W5,S4VX(M is a high-performance N-Channel MOSFET transistor designed for efficient switching applications in electronic circuits. Supporting a maximum continuous drain current of 15.8 amperes and a drain-source voltage of 600 volts, this MOSFET is suitable for power management and amplifier functions in industrial, commercial, and consumer electronics.

Its enhancement mode operation ensures high input impedance and low power loss, improving overall circuit efficiency. The device is housed in a TO-220 package with 3 pins configured for through-hole mounting, allowing reliable heat dissipation and mechanical stability.

With a maximum power dissipation of 40 watts, it supports demanding load conditions while maintaining robustness. The gate charge characteristics and voltage ratings facilitate precise gate control, ensuring swift switching responses vital for power electronics and signal processing applications.

Operating reliably in temperature ranges from -55°C to 150°C, this MOSFET accommodates various environmental conditions, from industrial equipment to outdoor installations. Its physical size is compact with a height of 15 mm, width of 4.5 mm, and length of 10 mm, making it suitable for modern PCB designs with restricted space.

Manufactured in Malaysia, the transistor adheres to rigorous quality standards, although it has no specific automotive or industrial standard certifications. This product supports applications in industrial automation, power supplies, and consumer electronics where efficient power switching is critical.

Features an enhancement mode channel type for effective switching performance. Encapsulated in a 3-pin TO-220 through-hole package for easy mounting. Maximum power dissipation rating of 40 W ensures reliable operation under load.

Operating temperature ranges from -55°C to 150°C for high durability. Low maximum drain-source resistance of 230 milliohms improves efficiency. Typical gate charge at Vgs is 43 nC for optimized switching characteristics.

Designed with maximum gate-source voltage tolerance of -30 to +30 V. Compact dimensions: height 15 mm, width 4.5 mm, length 10 mm for space-saving PCB designs. Made in Malaysia with high-quality construction to meet electronics manufacturing standards.

This Toshiba MOSFET is a reliable choice for engineers and manufacturers in electronics and electrical industries looking for a robust component for power control circuits. Explore more semiconductor and MOSFET products on EnvMart for complete electronic solutions.